TPCC8002-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 30 V ..
TPCC8003-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 5.8 °C ..
TPCC8003-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 30 V ..
TPCC8006-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 30 V ..
TPCC8007 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TPCC8062-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TS1854IPT ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSELECTRICAL CHARACTERISTICSV = +1.8V, V = 0V, T = 25°C (unless otherwise specified) CC ee ambSy ..
TS1871AID ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSapplications (Toys)+ +N Non I on In nv ve er rt tiing Inp ng Inpu ut 2 t 2V VDD DD 4 4 5 5■ Portabl ..
TS1871AIDT ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSfeatures both I/O Rail to Rail.N. N.C. C. 1 1 8 8 N. N.C. C.The common mode input voltage extends 2 ..
TS1871AILT ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSapplications (Toys)+ +N Non I on In nv ve er rt tiing Inp ng Inpu ut 2 t 2V VDD DD 4 4 5 5■ Portabl ..
TS1871AIYLT ,1.8V Input/Output Rail-to-Rail Low Power Operational AmplifiersAbsolute maximum ratingsSymbol Parameter Value Unit(1)V Supply voltage 7VCC(2)V Differential input ..
TS1871I ,1.8V/ INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Supply Voltage - note 1 7 VCCV Differential In ..
TPCC8002-H
Power MOSFET (N-ch single VDSS≤30V)
TPCC8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H)
TPCC8002-H High-Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications Small footprint due to a small and thin package
• High-speed switching Small gate charge: QSW = 7.1 nC (typ.) Low drain-source ON-resistance:
RDS (ON) = 7.6 mΩ (typ.) ( VGS = 4.5 V) High forward transfer admittance: |Yfs| = 65 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report
Unit: mm
Weight: 0.02 g (typ.)
Circuit Configuration 8 6
1 2 3 5
