TPCA8A11-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TPCC8002-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 30 V ..
TPCC8003-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 5.8 °C ..
TPCC8003-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 30 V ..
TPCC8006-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 30 V ..
TPCC8007 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TS1854ID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSELECTRICAL CHARACTERISTICSV = +3V, V = 0V, T = 25°C (unless otherwise specified) CC ee ambSymb ..
TS1854IN ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSapplications.The TS1851 is housed in the space-saving 5 pinSOT23-5 package which simplifies the boa ..
TS1854IPT ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSELECTRICAL CHARACTERISTICSV = +1.8V, V = 0V, T = 25°C (unless otherwise specified) CC ee ambSy ..
TS1871AID ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSapplications (Toys)+ +N Non I on In nv ve er rt tiing Inp ng Inpu ut 2 t 2V VDD DD 4 4 5 5■ Portabl ..
TS1871AIDT ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSfeatures both I/O Rail to Rail.N. N.C. C. 1 1 8 8 N. N.C. C.The common mode input voltage extends 2 ..
TS1871AILT ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSapplications (Toys)+ +N Non I on In nv ve er rt tiing Inp ng Inpu ut 2 t 2V VDD DD 4 4 5 5■ Portabl ..
TPCA8A11-H
Power MOSFET (N-ch single VDSS≤30V)
TPCA8A11-H
MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)
TPCA8A11-HTPCA8A11-HTPCA8A11-HTPCA8A11-H
1. 1. 1. 1. Applications Applications Applications Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Built-in a schottky barrier diode
Low forward voltage: VDSF = -0.6 V (max)
(2) High-speed switching
(3) Small gate charge: QSW = 10 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 4.5 V)
(5) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V)
(6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
