TPCA8A04-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 2.78 ° ..
TPCA8A05-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) 1 4 Characteristic Symbol Rating Unit 4.25 ± 0.2Drain-source v ..
TPCA8A05-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 4.17 ° ..
TPCA8A08-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) 4.25 ± 0.2Characteristic Symbol Rating Unit Drain-source volta ..
TPCA8A08-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 2.78 ° ..
TPCA8A09-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TS1852AIST ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit1)V7VCC Supply voltage 2)V±1 Vid Different ..
TS1852ID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit1)V7VCC Supply voltage 2)V±1 Vid Different ..
TS1852IDT ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSapplications.The TS1851 is housed in the space-saving 5 pinSOT23-5 package which simplifies the boa ..
TS1852IN ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSapplications, this Op-Amp is veryV 5 N.C.4DDwell-suited for any kind of battery-supplied andportabl ..
TS1852IPT ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSELECTRICAL CHARACTERISTICSV = +3V, V = 0V, T = 25°C (unless otherwise specified) CC ee ambSymb ..
TS1854AID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit1)V7VCC Supply voltage 2)V±1 Vid Different ..
TPCA8A04-H
Power MOSFET (N-ch single VDSS≤30V)
TPCA8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
Silicon N-Channel MOS Type (U-MOS V-H)
TPCA8A04-H High Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications Built-in a schottky barrier diode
Low forward voltage: VDSF = −0.6 V (max)
• High-speed switching Small gate charge: QSW = 13.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 2.3 mΩ (typ.) High forward transfer admittance: |Yfs| = 127 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design
the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 0.069 g (typ.)
Circuit Configuration
