TPCA8120 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless o ..
TPCA8128 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Ta = 25°C) S 41 Characteristics Symbol Rating Unit Drain-source voltage V ..
TPCA8A02-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) 4.25±0.2Characteristic Symbol Rating Unit Drain-source voltage ..
TPCA8A02-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 2.78 ° ..
TPCA8A02-H ,Power MOSFET (N-ch single VDSS≤30V)Applications 0.4±0.11.270.5±0.1 0.05 M A 8 5• Built-in a schottky barrier diode Low forward voltag ..
TPCA8A04-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 2.78 ° ..
TS1851AID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSELECTRICAL CHARACTERISTICSV = +3V, V = 0V, T = 25°C (unless otherwise specified) CC ee ambSymb ..
TS1851AIDT ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSTS1851TS1852TS18541.8V INPUT/OUTPUT RAIL TO RAILLOW POWER OPERATIONAL AMPLIFIERS ■ OPERATING AT V ..
TS1851I ,1.8V INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit1)V7VCC Supply voltage2)V±1Vid Differential Inpu ..
TS1851ID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSfeatures both Input and Output Rail toRail (1.71 @ V = 1.8V, R = 2kΩ), 120μA con-CC L8 N.C.N.C. 1su ..
TS1851ID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSTS1851TS1852TS18541.8V INPUT/OUTPUT RAIL TO RAILLOW POWER OPERATIONAL AMPLIFIERS ■ OPERATING AT V ..
TS1851IDT ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSTS1851TS1852TS18541.8V INPUT/OUTPUT RAIL TO RAILLOW POWER OPERATIONAL AMPLIFIERS ■ OPERATING AT V ..
TPCA8120
Power MOSFET (P-ch single)
TPCA8120
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCA8120TPCA8120TPCA8120TPCA8120
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Lithium-Ion Secondary Batteries Power Management Switches
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Small footprint due to a small and thin package
(2) Low drain-source on-resistance: RDS(ON) = 2.4 mΩ (typ.) (VGS = -10 V)
(3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V)
(4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
