TPCA8108 ,Power MOSFET (P-ch single)Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 2.78 ..
TPCA8108 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Ta = 25°C) 0.05 SSCharacteristics Symbol Rating Unit 1.1±0.21 4Drain-sour ..
TPCA8109 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Ta = 25°C) 5.0 ± 0.2Characteristics Symbol Rating Unit 0.05 S S Drain-sou ..
TPCA8120 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless o ..
TPCA8128 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Ta = 25°C) S 41 Characteristics Symbol Rating Unit Drain-source voltage V ..
TPCA8A02-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) 4.25±0.2Characteristic Symbol Rating Unit Drain-source voltage ..
TS1851AID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSELECTRICAL CHARACTERISTICSV = +3V, V = 0V, T = 25°C (unless otherwise specified) CC ee ambSymb ..
TS1851AIDT ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSTS1851TS1852TS18541.8V INPUT/OUTPUT RAIL TO RAILLOW POWER OPERATIONAL AMPLIFIERS ■ OPERATING AT V ..
TS1851I ,1.8V INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit1)V7VCC Supply voltage2)V±1Vid Differential Inpu ..
TS1851ID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSfeatures both Input and Output Rail toRail (1.71 @ V = 1.8V, R = 2kΩ), 120μA con-CC L8 N.C.N.C. 1su ..
TS1851ID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSTS1851TS1852TS18541.8V INPUT/OUTPUT RAIL TO RAILLOW POWER OPERATIONAL AMPLIFIERS ■ OPERATING AT V ..
TS1851IDT ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSTS1851TS1852TS18541.8V INPUT/OUTPUT RAIL TO RAILLOW POWER OPERATIONAL AMPLIFIERS ■ OPERATING AT V ..
TPCA8108
Power MOSFET (P-ch single)
TPCA8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
TPCA8108 High-Side Switching Applications
Motor Drive Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.7 mΩ (typ.) High forward transfer admittance: |Yfs| = 41S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −40 V) Enhancement mode: Vth = −1.5 to −3.0 V (VDS = −10 V , ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please
design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure
rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 0.080 g (typ.)
Circuit Configuration 8 6
1 2 3 5
