TPCA8106 ,Power MOSFET (P-ch single)Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 2.78 ..
TPCA8106 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Ta = 25°C) 41 Characteristics Symbol Rating Unit 4.25 ± 0.2Drain-source v ..
TPCA8106 ,Power MOSFET (P-ch single)absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
TPCA8107-H ,Power MOSFET (P-ch single)Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 4.17 ..
TPCA8108 ,Power MOSFET (P-ch single)Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 2.78 ..
TPCA8108 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Ta = 25°C) 0.05 SSCharacteristics Symbol Rating Unit 1.1±0.21 4Drain-sour ..
TS178R09 , 1A Ultra Low Dropout Voltage Regulator w/Disable
TS1851AID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSELECTRICAL CHARACTERISTICSV = +3V, V = 0V, T = 25°C (unless otherwise specified) CC ee ambSymb ..
TS1851AIDT ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSTS1851TS1852TS18541.8V INPUT/OUTPUT RAIL TO RAILLOW POWER OPERATIONAL AMPLIFIERS ■ OPERATING AT V ..
TS1851I ,1.8V INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit1)V7VCC Supply voltage2)V±1Vid Differential Inpu ..
TS1851ID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSfeatures both Input and Output Rail toRail (1.71 @ V = 1.8V, R = 2kΩ), 120μA con-CC L8 N.C.N.C. 1su ..
TS1851ID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSTS1851TS1852TS18541.8V INPUT/OUTPUT RAIL TO RAILLOW POWER OPERATIONAL AMPLIFIERS ■ OPERATING AT V ..
TPCA8106
Power MOSFET (P-ch single)
TPCA8106 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ)
TPCA8106 Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 2.9 mΩ (typ.)
(VGS= −10V） High forward transfer admittance: |Yfs| = 79S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: For Note 1 to 4, please refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 0.069 g (typ.)
Circuit Configuration 8 6
1 2 3 5
