TPCA8105 ,Power MOSFET (P-ch single)Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case (Tc = 2 ..
TPCA8106 ,Power MOSFET (P-ch single)Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 2.78 ..
TPCA8106 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Ta = 25°C) 41 Characteristics Symbol Rating Unit 4.25 ± 0.2Drain-source v ..
TPCA8106 ,Power MOSFET (P-ch single)absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
TPCA8107-H ,Power MOSFET (P-ch single)Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 4.17 ..
TPCA8108 ,Power MOSFET (P-ch single)Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 2.78 ..
TS178R09 , 1A Ultra Low Dropout Voltage Regulator w/Disable
TS1851AID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSELECTRICAL CHARACTERISTICSV = +3V, V = 0V, T = 25°C (unless otherwise specified) CC ee ambSymb ..
TS1851AIDT ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSTS1851TS1852TS18541.8V INPUT/OUTPUT RAIL TO RAILLOW POWER OPERATIONAL AMPLIFIERS ■ OPERATING AT V ..
TS1851I ,1.8V INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit1)V7VCC Supply voltage2)V±1Vid Differential Inpu ..
TS1851ID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSfeatures both Input and Output Rail toRail (1.71 @ V = 1.8V, R = 2kΩ), 120μA con-CC L8 N.C.N.C. 1su ..
TS1851ID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSTS1851TS1852TS18541.8V INPUT/OUTPUT RAIL TO RAILLOW POWER OPERATIONAL AMPLIFIERS ■ OPERATING AT V ..
TPCA8105
Power MOSFET (P-ch single)
TPCA8105 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)
TPCA8105 Notebook PC Applications
Portable Equipment Applications Small footprint due to compact and slim package Low drain-source ON-resistance : RDS (ON) = 23 mΩ (typ.)
(VGS = − 4.5V） High forward transfer admittance :|Yfs| = 14 S (typ.) Low leakage current : IDSS = −10 μA (VDS = −12 V) Enhancement mode
: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 μA )
Absolute Maximum Ratings (Ta = 25°C) Note: For (Note 1), (Note 2), (Note 3), (Note 4), refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with caution.
Unit: mm
Weight: 0.076 g (typ.)
Circuit Configuration 8 6
1 2 3 5
