TPCA8102 ,MOSFET TPC SeriesThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 2.78 ..
TPCA8102 ,MOSFET TPC SeriesApplications 58 0.15±0.05• Small footprint due to small and thin package • Low drain-source ON res ..
TPCA8103 ,MOSFET TPC SeriesThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 2.78 ..
TPCA8104 ,Power MOSFET (P-ch single)Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case (Tc = 25 ..
TPCA8105 ,Power MOSFET (P-ch single)Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case (Tc = 2 ..
TPCA8106 ,Power MOSFET (P-ch single)Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 2.78 ..
TS178R09 , 1A Ultra Low Dropout Voltage Regulator w/Disable
TS1851AID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSELECTRICAL CHARACTERISTICSV = +3V, V = 0V, T = 25°C (unless otherwise specified) CC ee ambSymb ..
TS1851AIDT ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSTS1851TS1852TS18541.8V INPUT/OUTPUT RAIL TO RAILLOW POWER OPERATIONAL AMPLIFIERS ■ OPERATING AT V ..
TS1851I ,1.8V INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit1)V7VCC Supply voltage2)V±1Vid Differential Inpu ..
TS1851ID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSfeatures both Input and Output Rail toRail (1.71 @ V = 1.8V, R = 2kΩ), 120μA con-CC L8 N.C.N.C. 1su ..
TS1851ID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSTS1851TS1852TS18541.8V INPUT/OUTPUT RAIL TO RAILLOW POWER OPERATIONAL AMPLIFIERS ■ OPERATING AT V ..
TPCA8102
MOSFET TPC Series
TPCA8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
TPCA8102 Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 4.5mΩ (typ.) High forward transfer admittance: |Yfs| = 60S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C) Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
Weight: 0.076 g (typ.)
Circuit Configuration 8 6
1 2 3 5
