TPCA8088 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless o ..
TPCA8102 ,MOSFET TPC SeriesThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 2.78 ..
TPCA8102 ,MOSFET TPC SeriesApplications 58 0.15±0.05• Small footprint due to small and thin package • Low drain-source ON res ..
TPCA8103 ,MOSFET TPC SeriesThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 2.78 ..
TPCA8104 ,Power MOSFET (P-ch single)Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case (Tc = 25 ..
TPCA8105 ,Power MOSFET (P-ch single)Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case (Tc = 2 ..
TS178R09 , 1A Ultra Low Dropout Voltage Regulator w/Disable
TS1851AID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSELECTRICAL CHARACTERISTICSV = +3V, V = 0V, T = 25°C (unless otherwise specified) CC ee ambSymb ..
TS1851AIDT ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSTS1851TS1852TS18541.8V INPUT/OUTPUT RAIL TO RAILLOW POWER OPERATIONAL AMPLIFIERS ■ OPERATING AT V ..
TS1851I ,1.8V INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit1)V7VCC Supply voltage2)V±1Vid Differential Inpu ..
TS1851ID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSfeatures both Input and Output Rail toRail (1.71 @ V = 1.8V, R = 2kΩ), 120μA con-CC L8 N.C.N.C. 1su ..
TS1851ID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSTS1851TS1852TS18541.8V INPUT/OUTPUT RAIL TO RAILLOW POWER OPERATIONAL AMPLIFIERS ■ OPERATING AT V ..
TPCA8088
Power MOSFET (N-ch single VDSS≤30V)
TPCA8088
MOSFETs Silicon N-Channel MOS (U-MOS)
TPCA8088TPCA8088TPCA8088TPCA8088
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Notebook PCs Mobile Equipment
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Small footprint due to a small and thin package
(2) Low drain-source on-resistance: RDS(ON) = 1.7 mΩ (typ.) (VGS = 10 V)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
