TPCA8060-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 2.78 ° ..
TPCA8060-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) 4.25 ± 0.2Characteristic Symbol Rating Unit Drain-source volta ..
TPCA8062-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise speci ..
TPCA8063-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specifi ..
TPCA8064-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal CharacteristicsCharacteristics Symbol Max UnitChannel-to-case thermal resistance (T = 25 ) ..
TPCA8065-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal CharacteristicsCharacteristics Symbol Max UnitChannel-to-case thermal resistance (T = 25 ) ..
TS12A4516DG4 ,Low-Voltage, Low On-State Resistance SPST CMOS Analog Switches 8-SOIC -40 to 85Electrical Characteristics for ±5-V SupplyV = 4.5 V to 5.5 V, V = –4.5 V to –5.5 V, T = –40°C to 85 ..
TS12A4516DR ,Low-Voltage, Low On-State Resistance SPST CMOS Analog Switches 8-SOIC -40 to 85FEATURES• ±1-V to ±6-V Dual-Supply Operation • Specified Low ON-Leakage Currents:• Specified ON-Sta ..
TS12A4517DG4 ,Low-Voltage, Low On-State Resistance SPST CMOS Analog Switches 8-SOIC -40 to 85Electrical Characteristics for ±5-V SupplyV = 4.5 V to 5.5 V, V = –4.5 V to –5.5 V, T = –40°C to 85 ..
TS12A4517DR ,Low-Voltage, Low On-State Resistance SPST CMOS Analog Switches 8-SOIC -40 to 85FEATURES• ±1-V to ±6-V Dual-Supply Operation • Specified Low ON-Leakage Currents:• Specified ON-Sta ..
TS13009CZ , High Voltage NPN Transistor
TS1431ACX , Adjustable Precision Shunt Regulator
TPCA8060-H
Power MOSFET (N-ch single VDSS≤30V)
TPCA8060-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPCA8060-H High-Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 17nC (typ.) Low drain-source ON-resistance:
RDS (ON) = 2.8 mΩ (typ.) ( VGS = 4.5 V) High forward transfer admittance: |Yfs| = 141 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please
design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 0.069 g (typ.)
Circuit Configuration 8 6
1 2 3 5
