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TPCA8053-H |TPCA8053HTOSHIBAN/a50000avaiPower MOSFET (N-ch single 30V<VDSS≤60V)


TPCA8053-H ,Power MOSFET (N-ch single 30V<VDSS≤60V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 4.17 °C ..
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TPCA8057-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal CharacteristicsCharacteristics Symbol Max UnitChannel-to-case thermal resistance (T = 25 ) ..
TPCA8058-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25  unless otherwise specified) unless o ..
TPCA8059-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal CharacteristicsCharacteristics Symbol Max UnitChannel-to-case thermal resistance (Tc = 25) ..
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TS1220-600H ,12A SCRSFEATURES:ASymbol Value UnitGI12 AT(RMS)KAAV /V600 to 1000 VDRM RRMI0.2 to 15 mA KGT K AAGGDESCRIPTI ..
TS12A12511DRJR ,5-Ohm Single-Channel SPDT Switch With Negative Signaling Capability 8-SON -40 to 85Features 3 DescriptionThe TS12A12511 is a bidirectional, single-channel,1• ±2.7-V to ±6-V Dual Supp ..
TS12A44513PWR ,Low On-State Resistance Quad SPST CMOS Analog Switches 14-TSSOP -40 to 85Features 3 DescriptionThe TS12A44513, TS12A44514, and TS12A445151• 2-V to 12-V Single-Supply Operat ..
TS12A4514D ,Low-Voltage, Low On-State Resistance SPST CMOS Analog Switches 8-SOIC -40 to 85Electrical Characteristics for 5-V SupplyV = 4.5 V to 5.5 V, V = 2.4 V, V = 0.8 V, T = –40°C to 85° ..
TS12A4514DBVR ,Low-Voltage, Low On-State Resistance SPST CMOS Analog Switches 5-SOT-23 -40 to 85FEATURES• 2-V to 12-V Single-Supply Operation • Specified Low ON-Leakage Currents:• Specified ON-St ..


TPCA8053-H
Power MOSFET (N-ch single 30V<VDSS≤60V)
TPCA8053-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPCA8053-H

Switching Regulator Applications
Motor Drive Applications
DC-DC Converter Applications Small footprint due to a small and thin package
• High-speed switching Small gate charge: QSW = 6.9 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 13.9 mΩ (typ.) High forward transfer admittance: |Yfs| = 46 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)
Absolute Maximum Ratings (Ta = 25°C)

Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 0.069 g (typ.)
Circuit Configuration
8 6
1 2 3 5
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