TPCA8045-H ,Power MOSFET (N-ch single 30V<VDSS≤60V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 2.78 ° ..
TPCA8045-H ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 4.25 ± 0.2Drain-source volta ..
TPCA8050-H ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 4.25 ± 0.2Drain-source volta ..
TPCA8051-H ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 4.25 ± 0.2Drain-source volta ..
TPCA8052-H ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 4.25 ± 0.2Drain-source volta ..
TPCA8053-H ,Power MOSFET (N-ch single 30V<VDSS≤60V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 4.17 °C ..
TS120STR , Multifunction Telecom Switches
TS1220 ,12A SCRSTN12, TS12 and TYNx12 Series®SENSITIVE & STANDARD 12A SCRs MAIN
TS1220-600B ,12A SCRSapplications such as overvoltage crowbarprotection, motor control circuits in power toolsand kitche ..
TS1220-600B-TR ,12A SCRs, 600V, sensitivity 200uAapplications such as overvoltage crowbarprotection, motor control circuits in power toolsand kitche ..
TS1220-600H ,12A SCRSFEATURES:ASymbol Value UnitGI12 AT(RMS)KAAV /V600 to 1000 VDRM RRMI0.2 to 15 mA KGT K AAGGDESCRIPTI ..
TS12A12511DRJR ,5-Ohm Single-Channel SPDT Switch With Negative Signaling Capability 8-SON -40 to 85Features 3 DescriptionThe TS12A12511 is a bidirectional, single-channel,1• ±2.7-V to ±6-V Dual Supp ..
TPCA8045-H
Power MOSFET (N-ch single 30V<VDSS≤60V)
TPCA8045-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPCA8045-H High-Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 23 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 2.4 mΩ (typ.) High forward transfer admittance: |Yfs| = 136 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 0.069 g (typ.)
Circuit Configuration 8 6
1 2 3 5
