TPCA8025 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) S 41 Characteristics Symbol Rating Unit Drain-source voltage V ..
TPCA8025 ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 2.78 ..
TPCA8026 ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 2.78 ° ..
TPCA8028-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 2.78 ° ..
TPCA8030H ,Power MOSFET (N-ch single VDSS≤30V)Applications 5 0.15 ± 0.05 • Small footprint due to a small and thin package • High-speed switchi ..
TPCA8030-H ,Power MOSFET (N-ch single VDSS≤30V)TPCA8030-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H) TPCA8030-H Hi ..
TS1142 , 10/100 BASE-TX TRANSFORMER MODULES
TS117PTR , Multifunction Telecom Switch
TS117PTR , Multifunction Telecom Switch
TS117S , Multifunction Telecom Switch
TS117STR , Multifunction Telecom Switch
TS12 ,SENSITIVE & STANDARD(12A SCRs)applications such as overvoltage crowbarprotection, motor control circuits in power toolsand kitche ..
TPCA8025
Power MOSFET (N-ch single VDSS≤30V)
TPCA8025 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TPCA8025 Lithium-Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 2.7 mΩ (typ.) High forward transfer admittance: |Yfs| = 80S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 0.069 g (typ.)
Circuit Configuration 8 6
1 2 3 5
