TPCA8009-H ,MOSFET TPC SeriesTPCA8009-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type( -MOSV) TENTATIVETPCA8009-H ..
TPCA8010-H ,MOSFET TPC SeriesTPCA8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type( -MOSV) TENTATIVE TPCA8010- ..
TPCA8011-H ,MOSFET TPC SeriesThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 2.78 ..
TPCA8011-H ,MOSFET TPC SeriesApplications 0.15±0.05• Small footprint due to small and thin package • High speed switching 41 0 ..
TPCA8014-H ,MOSFET TPC SeriesApplications 0.15±0.05• Small footprint due to small and thin package • High speed switching 1 4 ..
TPCA8016-H ,MOSFET TPC SeriesThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 2.78 ..
TS1117 , 800mA Low Dropout Positive Voltage Regulator
TS1117BCW33 , 800mA Low Dropout Positive Voltage Regulator
TS1117BCW33 , 800mA Low Dropout Positive Voltage Regulator
TS1117CW , 800mA Low Dropout Positive Voltage Regulator
TS1117CW-18 , 800mA Low Dropout Positive Voltage Regulator
TS1142 , 10/100 BASE-TX TRANSFORMER MODULES
TPCA8009-H
MOSFET TPC Series
TPCA8009-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type(π-MOSV)
TPCA8009-H High Speed and High Efficiency DC-DC Converters Small footprint due to small and thin package High speed switching Small gate charge: Qg = 10nC (typ.) Low drain-source ON resistance: RDS (ON) = 240mΩ (typ.) High forward transfer admittance: |Yfs| = S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta === = 25°C)
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
Weight: 0.08 g (typ.)
Circuit Configuration 8 6
1 2 3 5
