TPCA8005-H ,MOSFET TPC SeriesTPCA8005-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) ..
TPCA8006-H ,MOSFET TPC SeriesApplications 0.4±0.11.270.05 M A 8 5 • Small footprint due to small and thin package 0.15±0.05• Hig ..
TPCA8007-H ,MOSFET TPC SeriesApplications 0.4±0.11.270.05 M A 8 5 • Small footprint due to small and thin package 0.15±0.05• Hig ..
TPCA8009-H ,MOSFET TPC SeriesTPCA8009-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type( -MOSV) TENTATIVETPCA8009-H ..
TPCA8010-H ,MOSFET TPC SeriesTPCA8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type( -MOSV) TENTATIVE TPCA8010- ..
TPCA8011-H ,MOSFET TPC SeriesThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 2.78 ..
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TPCA8005-H
MOSFET TPC Series
TPCA8005-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
TPCA8005-H High Speed and High Efficiency DC-DC Converters
Notebook PC Applications
Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Qg = 24 nC (typ.) Low drain-source ON resistance: RDS (ON) = 6.8 mΩ (typ.) High forward transfer admittance: |Yfs| = 46S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C) Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 0.080 g (typ.)
Circuit Configuration 8 6
1 2 3 5
