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TPC8A06-H
Power MOSFET (N-ch single VDSS≤30V)
TPC8A06-H
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
Silicon N-Channel MOS Type (U-MOS V-H)
TPC8A06-H High Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications Built-in schottky barrier diode
Low forward voltage: VDSF = 0.6 V (max) High-speed switching Small gate charge: QSW = 4.5 nC (typ.) Low drain-source ON-resistance:
RDS (ON) = 9.2 mΩ (typ.)( VGS = 4.5 V) High forward transfer admittance: |Yfs| = 37 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 0.085g (typ.)
Circuit Configuration 8 6
1 2 3 5
