TPC8A04-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to ambient R 65. ..
TPC8A05-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to ambient R 65.8 ..
TPC8A06-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to ambient R 65. ..
TPC8A07-H , HIgh Effciency DC-DC Converter Applications Notebook PC Applications Portable-Equipment Applications
TPC-90 , Telpower Compact Fused Disconnect Switch
TPC-90 , Telpower Compact Fused Disconnect Switch
TS1084CZ-2.5 , 5A Low Dropout Positive Voltage Regulator
TS1084CZ-2.5 , 5A Low Dropout Positive Voltage Regulator
TS1085 , 3A Low Dropout Positive Voltage Regulator
TS1085 , 3A Low Dropout Positive Voltage Regulator
TS1085CM-3.3 , 3A Low Dropout Positive Voltage Regulator
TS1086 , 1.5A Low Dropout Positive Voltage Regulator
TPC8A04-H
Power MOSFET (N-ch single VDSS≤30V)
TPC8A04-H
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
Silicon N-Channel MOS Type (U-MOS V-H)
TPC8A04-H High Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications Built-in schottky barrier diode
Low forward voltage: VDSF = −0.6 V (max)
• High-speed switching Small gate charge: QSW = 13 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 2.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 62 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 0.085g (typ.)
Circuit Configuration 8 6
1 2 3 5
