TPC8A01 ,MOSFET TPC SeriesTHERMAL CHARACTERISTICS -Thermal resistance, Single-device operationchannel to ambient (Note3a)(t=1 ..
TPC8A01 ,MOSFET TPC SeriesTOSHIBA TPC8A01OIITOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ll-IME)02: INCLUDES S ..
TPC8A02-H , ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode High-Efficiency DC/DC Converter Applications
TPC8A02-H , ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode High-Efficiency DC/DC Converter Applications
TPC8A03-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to ambient R 65. ..
TPC8A04-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to ambient R 65. ..
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TPC8A01
MOSFET TPC Series
Tt0yBNllllBa
TPC8A01
01:T0SHIBh FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tr-flung)
02: INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (0-g0SIli)
TPC8A01
DC-DC CONVERTER
NOTE BOOK PC
PORTABLE MACHINES AND TOOLS
. Includes Schottky Barrier Diode Type.
. Compact and thin package, and a small mounting area. (01,02)
. High Speed Switching. (OI)
. Small Gate Charge. (01): Ile--- nC(Typ.)
. Low Drain - Source ON Resistance. (02) : Rosz):
. High Forward Transfer Admittance. (02) : |Yf,i=
S (Tm)
m ft (Typ. )
. Low Leakage Current. (01,02) : I 1355:1011 A(Max.) (VDS=30V)
. Enhancement - Mode. (01,02) : V‘h=1.3~2.5V (VDS=10V, ID=1mA)
MAXIMUM RATINGS (Ta=25°C)
TENTATIVE
UNITme
4.0:O.1
lit? itat-a-a-a-,-,-,
0.595 I [lla-it-iii-iii-rig liEiiE%
s.smx. d
£1.53.
tt tt 2
2 gm: _ 5,6 DRAIN‘CATHODE
3 SOURCE 7.8 DRAIN
Note.' (Notel), (Note2), (Note3), (Note4), (Note5) Please see next page.
THIS TRANSISTOR IS AN ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
CHARACTERISTIC SYMBOL RATING UNIT T
01 02 JEDEC -
Drain - Source Voltage Voss 30 30 V JEITA -
Drain - Gate yoltage(RGsa=20k m VDGR 30 30 V TOSHIBA 2..601E
Gate - Source Voltage Voss $20 -A-20 V
. DC (Notel) I D 6 8. 6 A . .
Drain Current Pulse los, 24 34.4 A Weight:0.08g('lyp)
Drain Power Single-deviceOperation P 00) l. 5 CIRCUIT CONFIGURATION
Dissipation (Note3a)
(t=lOs) Single-device value at P D(2) 1. 1 r21 g, J, /2,
(NoteZa) dual Operation (Note3b) W
Drain Power Sing1e-device0peration P on) o. 75
Dissipation (Note3a) h"
(t==10s) Single-device value at PDQ) o. 45 '
(Yote2b) dual Operation (Note3b)
Single Pulse Avalanche Energy (Note4) EAS m J
Avalanche Current (Notel) I AR 6. 0 8. 6 A I
Repetitive Avalanche Energy h" Y 'r/ Li
Single-device value at dual Operation EAR 0.11 m]
(NoteZa, 3b, 5) Q1 Q2
Channel Temperature T tt h 150 'C
Storage Temperature Range T s t I --55--150 'ti;
T'tMiii)NliliBa TPC8A01
TENTATIVE
THERMAL CHARACTERISTICS
CHARACTERISTICS SYMBOL MAX. UNIT
Thermal resistance, Single-device operation R.‘h(ch_.)u) 83.3
channel to ambient (Note3a)
(t:105) (Note 2a) Single-device value at Rthoh-a)eo 114
dual operation (Note3b) 0C/W
Thermal resistance, Single-device operation R.,h(ch_.)“) 167
channel to ambient (Note3a)
(t=105) (Note 2b) Single-device value at Rtht,,h-oe; 278
dual operation (Note3b)
Marking (Note 6) TYPE
TPCSAOI
Notel: Please use devices on condition that the channel temperature is below 150t2.
Note22
(a) Device mounted on glass-epoxy board (a)' (b) Device mounted on glass-epoxy board (b)
FR-4 FR-A
25.4X25.4X0.8 25.4X25.4X0.8
r-f (Unit in mm) “hm (Unit in mm)
(a) (b)
Note31
(a) The power dissipation and thermal resistance values shown are for a single device
(During single-device operation, power is only applied to one device)
(b) The power dissipation and thermal resistance values shown are for a single device
(During dual operation, power is evenly applied to both device)
Note42 (ll: vts=24v,Ta--25'tAinitia1),L--c mlf,Ia--a A,Rs=25Q
(12: Iu--24v, T,c=25'C(initial) , L= mH, In= A, Rs=25 Q
Note52 Repetitive rating ; Pulse Width Limited by maximunm channel temperature.
Note6: C) on lower right of the marking indicates Pin 1
* shows lot number.(Year of manufacture: last decimal digit of the year of manufacture, Month of
manufacture: January to December are denoted by letter A to L respectively)
TCJJSIHIIIIA TPCSA01
Q 1 TENTATIVE
Electrical Characteristics (T,=25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current lass Vas=k.16V,hsrsOV - - Lb.10 11 A
Drain cut-OFF current loss Vos=3OV-Vcs=ov - - 10 " A
V(BR)DSS 10:1 0mA.VGs=0V 30 - -
Drain-source breakdown voltage v V
Vomosx 10:1 omA.VGs:-20V 1 5 - -
Gate threshold voltage Vo, Vos=10VJn=1mA 1.3 - 2.5 V
VGS=4.5V.ID=4A - 26 33
Drain-source ON resistance Rosmn) VGS=10VJD=6A - 18 23 m9
Forward transfer admittance 'stl VDS=10V,ID=3.0A 3.8 7.6 - S
Input capacitance th,, - 830 -
Reverse transfer capacitance Cr,, VDs=10V,VGs=0V.f=1MHz - 130 - pF
Output capacitance Coss - 400 -
Rise time t, 10Y 1n=3 vom - 18 -
Turn-ON time to" ov I G - 25 -
Switching time F II . E ns
a time t, 4. 70 m - 3.3 -
Turn-OFF time tg, Duty§1%, tw=10us VDD:15V - 20 -
Total gate charge Q - 14 -
(gate-source plus gate-drain) '
Gate-source charge 1 om 1/ms'--.-Q4V,Vas--10VJo--6.0A - - nC
Gate-Drain(”mi||er")charge Q d - 3 4 -
Source-Drain Diode Ratin s and Characteristics (T,=25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse 1an - - - 24
Diode foward voltage Vosr Ime=6.0ANas--0V - - -1.2
Tt)yBlyillliBlh TPC8A01
Q 2 TENTATIVE
Electrical Characteristics (T,=25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current 1655 VGS=i16V.VDS=OV - - :10 u A
Drain cut-OFF current loss VDS:30VIVGS=0V - - 500 u A
V(BR)Dss ID=1 0mA.VGs=OV 30 - -
Drain-source breakdown voltage V
Kaasasr ID=1 0mANs---20V 1 5 - -
Gate threshold voltage Va. Vus=10VJD=I mA 1.3 - 2.5 V
Vas--4.5Vlr8.6A - 20 26
Drain-source ON resistance Rosoro Vas-- 1 OV,G= 8. 6 A - 16 21 m Q
Forward transfer admittance IYssl Vos=10VJora4.3A 5.7 11.4 - s
Input capacitance ty,,, - 2120 -
Reverse transfer capacitance Crss VDS=1OV NG-NN f=1MHz - 230 - pF
Output capacitance Cm - 430 -
Rise time t; 10v ID=4. 3A vaT - 7.1 -
. . . Turn-ON time to,, ov l g - 18 -
Switching time F II . c?' ns
a tlme t, 4. m rd - 5.6 -
Turn-OFF time to” Duty§1%, tw=10us FOO = 15ll - 33 -
Total gate charge Q - 35 -
(gate-source plus gate-drain) I
Gate-source charge 1 Qgsl VmH-r24V,Vas=10V,U---8.6A - - "
Gatts-Drain(''miller")charge Q d - 6 6 -
Source-Drain Diode Ratings and Characteristics (T,=25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse Ionp - - -
Diode foward voltage VDSF 1mi--1.0ANas=0V - HI 48 -0.5
T©SHHIA TPC8AO1
RESTRICTIONS ON PRODUCT USE
o00707EAA
. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. l is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
. The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, ofrICts equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage''). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, tratM signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
. The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
. The information contained herein is subject to change without notice.
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