TPC8407 ,Power MOSFET (N-ch + P-ch complementaryThermal CharacteristicsCharacteristics Symbol Max UnitChannel-to-ambient thermal resistance (single ..
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TPC8A01 ,MOSFET TPC SeriesTHERMAL CHARACTERISTICS -Thermal resistance, Single-device operationchannel to ambient (Note3a)(t=1 ..
TPC8A01 ,MOSFET TPC SeriesTOSHIBA TPC8A01OIITOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ll-IME)02: INCLUDES S ..
TPC8A02-H , ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode High-Efficiency DC/DC Converter Applications
TPC8A02-H , ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode High-Efficiency DC/DC Converter Applications
TS1051 , Constant Voltage and Constant Current Controller For Battery Chargers and Adaptors
TS1084CM-3.3 , 5A Low Dropout Positive Voltage Regulator
TS1084CZ-2.5 , 5A Low Dropout Positive Voltage Regulator
TS1084CZ-2.5 , 5A Low Dropout Positive Voltage Regulator
TS1085 , 3A Low Dropout Positive Voltage Regulator
TS1085 , 3A Low Dropout Positive Voltage Regulator
TPC8407
Power MOSFET (N-ch + P-ch complementary
TPC8407
MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)
TPC8407TPC8407TPC8407TPC8407
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Motor Drivers CCFL Inverters Mobile Equipments
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Small footprint due to a small and thin package
(2) High speed switching
(3) Low drain-source on-resistance
P-channel RDS(ON) = 18 mΩ (typ.) (VGS = -10 V),
N-channel RDS(ON) = 14 mΩ (typ.) (VGS = 10 V)
(4) Low leakage current
P-channel IDSS = -10 µA (VDS = -30 V),
N-channel IDSS = 10 µA (VDS = 30 V)
(5) Enhancement mode
P-channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA),
N-channel Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
