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TPC8402
Field Effect Transistor Silicon N, P Channel MOS Type (pi-MOSVI/U-MOSII) Lithium Ion Secondary Battery Applications Notebook PCs Portable Equipment Applications
TPC8402
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (π−MOSVI/U−MOSII)
TPC8402 Lithium Ion Secondary Battery Applications
Notebook PCs
Portable Equipment Applications Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.) N Channel RDS (ON) = 37 mΩ (typ.) High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel |Yfs| = 6 S (typ.) Low leakage current : P Channel IDSS = −10 µA (VDS = −30 V) N Channel IDSS = 10 µA (VDS = 30 V) Enhancement−mode : P Channel Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1mA) N Channel Vth = 0.8~2.0 V (VDS = 10 V, ID = 1mA)
Maximum Ratings (Ta = 25°C) −30 30
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4a), (Note 4b) and (Note 5), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 0.080 g (typ.)
Circuit Configuration
