TPC8302 ,Field Effect Transistor Silicon P Channel MOS Type (L2-pi-MOSVI) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCsTPC8302 2TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L−π−MOSVI) TPC8302 Lithium Io ..
TPC8303 ,Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCsTPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII) TPC8303 Lithium Ion ..
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TPC8401 ,Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII) Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PCsTPC8401 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII) TPC8401 Lithium Io ..
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TPC8403 ,Field Effect Transistor Silicon P, N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII) Motor Drive Notebook PC Portable Machines and ToolsTPC8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (P Channel U-MOSII/N Channel ..
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1051 , Constant Voltage and Constant Current Controller For Battery Chargers and Adaptors
TS1084CM-3.3 , 5A Low Dropout Positive Voltage Regulator
TS1084CZ-2.5 , 5A Low Dropout Positive Voltage Regulator
TPC8302
Field Effect Transistor Silicon P Channel MOS Type (L2-pi-MOSVI) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
TPC8302
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 −π−MOSVI)
TPC8302 Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs 2.5 V Gate drive Small footprint due to small and thin package Low drain−source ON resistance: RDS (ON) = 100 mΩ (typ.) High forward transfer admittance: |Yfs| = 5 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement−mode: Vth = −0.5~ −1.1 V (VDS = −10 V, ID = −200 µA)
Maximum Ratings (Ta = 25°C) Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4)
and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 0.080 g (typ.)
Circuit Configuration