TPC8229-H ,Power MOSFET (N-ch dual)Thermal CharacteristicsCharacteristics Symbol Max UnitChannel-to-ambient thermal resistance (t = 10 ..
TPC8301 ,Field Effect Transistor Silicon P Channel MOS Type (L2-pi-MOSVI) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCsTPC8301 2TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L−π−MOSVI) TPC8301 Lithium Io ..
TPC8302 ,Field Effect Transistor Silicon P Channel MOS Type (L2-pi-MOSVI) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCsTPC8302 2TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L−π−MOSVI) TPC8302 Lithium Io ..
TPC8303 ,Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCsTPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII) TPC8303 Lithium Ion ..
TPC8305 ,Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCsTPC8305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII) TPC8305 Lithium Ion ..
TPC8401 ,Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII) Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PCsTPC8401 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII) TPC8401 Lithium Io ..
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1051 , Constant Voltage and Constant Current Controller For Battery Chargers and Adaptors
TS1084CM-3.3 , 5A Low Dropout Positive Voltage Regulator
TS1084CZ-2.5 , 5A Low Dropout Positive Voltage Regulator
TPC8229-H
Power MOSFET (N-ch dual)
TPC8229-H
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPC8229-HTPC8229-HTPC8229-HTPC8229-H
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications DC-DC Converters CCFL Inverters
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) High-speed switching
(2) Small gate charge: QSW = 2.4 nC (typ.)
(3) Low drain-source on-resistance: RDS(ON) = 53 mΩ (typ.)
(4) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)
(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
