TPC8210 ,Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) Lithium Ion Battery Applications Portable Equipment Applications Notebook PC ApplicationsThermal Characteristics Characteristics Symbol MaxUnit Single-device operationR 83.3th (ch-a) (1)(N ..
TPC8211 ,Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) Lithium Ion Battery Applications Portable Equipment Applications Notebook PC ApplicationsThermal Characteristics Characteristics Symbol MaxUnit Single-device operationR 83.3th (ch-a) (1)(N ..
TPC8223-H ,Power MOSFET (N-ch dual)Thermal CharacteristicsCharacteristics Symbol Max UnitChannel-to-ambient thermal resistance (single ..
TPC8224-H ,Power MOSFET (N-ch dual)Thermal CharacteristicsCharacteristics Symbol Max UnitChannel-to-ambient thermal resistance (single ..
TPC8227-H ,Power MOSFET (N-ch dual)Thermal CharacteristicsCharacteristics Symbol Max UnitChannel-to-ambient thermal resistance (single ..
TPC8228-H ,Power MOSFET (N-ch dual)Thermal CharacteristicsCharacteristics Symbol Max UnitChannel-to-ambient thermal resistance (single ..
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1051 , Constant Voltage and Constant Current Controller For Battery Chargers and Adaptors
TS1084CM-3.3 , 5A Low Dropout Positive Voltage Regulator
TS1084CZ-2.5 , 5A Low Dropout Positive Voltage Regulator
TPC8210
Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications
TPC8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III)
TPC8210 Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications Low drain−source ON resistance: RDS (ON) = 11 mΩ (typ.) High forward transfer admittance: |Yfs| = 13 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement−mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C) Tstg
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please
refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 0.08 g (typ.)
Circuit Configuration 8 7 6 5
1 2 3 4
