TPC8134 ,Power MOSFET (P-ch single)
TPC8206 ,TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment ApplicationsThermal Characteristics Characteristics Symbol MaxUnit Single-device operationR 83.3th (ch-a) (1)(N ..
TPC8207 ,Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment ApplicationsTPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8207 Lithium I ..
TPC8208 ,Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCsTPC8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8208 Lithium I ..
TPC8209 ,Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PC ApplicationsThermal Characteristics Characteristics Symbol MaxUnit Single-device operationR 83.3th (ch-a) (1)(N ..
TPC8209 ,Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PC ApplicationsApplications Small footprint due to small and thin package Low drain−source ON resistance: ..
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1051 , Constant Voltage and Constant Current Controller For Battery Chargers and Adaptors
TS1084CM-3.3 , 5A Low Dropout Positive Voltage Regulator
TS1084CZ-2.5 , 5A Low Dropout Positive Voltage Regulator
TPC8134
Power MOSFET (P-ch single)
TPC8134
MOSFETs Silicon P-Channel MOS (U-MOS)
TPC8134TPC8134TPC8134TPC8134
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Lithium-Ion Secondary Batteries Power Management Switches
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Small footprint due to small and thin package
(2) Low drain-source on-resistance: RDS(ON) = 39 mΩ (typ.) (VGS = -10 V)
(3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)
(4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
