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TPC8127ToshibaN/a30000avaiPower MOSFET (P-ch single)


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TPC8127
Power MOSFET (P-ch single)
TPC8127 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
TPC8127

Lithium Ion Battery Applications
Power Management Switch Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5 mΩ (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5mA)
Absolute Maximum Ratings (Ta = 25°C)

Note 1, Note 2, Note 3 : See the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 0.080 g (typ.)
Circuit Configuration

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