TPC8117 ,Power MOSFET (P-ch single)
TPC8117 ,Power MOSFET (P-ch single)
TPC8117 ,Power MOSFET (P-ch single)
TPC8121 ,Power MOSFET (P-ch single)
TPC8122 ,Power MOSFET (P-ch single)
TPC8125 ,Power MOSFET (P-ch single)
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1051 , Constant Voltage and Constant Current Controller For Battery Chargers and Adaptors
TS1084CM-3.3 , 5A Low Dropout Positive Voltage Regulator
TS1084CZ-2.5 , 5A Low Dropout Positive Voltage Regulator
TPC8117
Power MOSFET (P-ch single)
TPC8117 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ)
TPC8117 Lithium Ion Battery Applications
Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance : RDS (ON) = 3.0 mΩ (typ.) High forward transfer admittance : |Yfs| = 54 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note 1, Note 2, Note 3 and Note 4: See the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 0.080 g (typ.)
Circuit Configuration 8 6
1 2 3 5
