TPC8112 ,MOSFET TPC Series
TPC8113 ,MOSFET TPC Series
TPC8113 ,MOSFET TPC Series
TPC8116-H , High Efficiency DC／DC Converter Applications
TPC8116-H , High Efficiency DC／DC Converter Applications
TPC8117 ,Power MOSFET (P-ch single)
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1051 , Constant Voltage and Constant Current Controller For Battery Chargers and Adaptors
TS1084CM-3.3 , 5A Low Dropout Positive Voltage Regulator
TS1084CZ-2.5 , 5A Low Dropout Positive Voltage Regulator
TPC8112
MOSFET TPC Series
T©SHHIA
TPC8112
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
TPC81 12
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
0 Small footprint due to small and thin package
. Low drain-source ON resistance: RDS (ON) = 5.0mQ (typ.)
. High forward transfer admittance: lstl = 31 S (typ.)
. Low leakage current: IDSS = -10 pA (max) (VDS = -30 V)
. Enhancement-mode: Vth = -O.8 to -2.0 V (VDs = -10 V, ID = -1 mA)
Maximum Ratings (Ta = 25''C)
'rElN'l'A'l' l VE
Unit: mm
0.595m E.Erd
5.6MAX
s.tutut .13
Od 29 05:02
1, 2, 3 SOURCE
4 GATE
5, ti, 7, 8 DRAIN
TOSHIBA 2-601 B
Characteristics Symbol Rating Unit
Drain-source voltage VDss -30 V
Drain-gate voltage Fas - 20 kit) VDGR -30 V
Gate-source voltage Vass :20 V
DC (Note 1) ID -13
Drain current A
Pulse (Note 1) lop -52
Drain power dissipation (t - 10 s)
(Note 2a) PD 1 9 W
Drain power dissipation (t - 10 s)
(Note 2b) PD 1.0 W
Single pulse avalanche energy
(Note 3) EAS 219 md
Avalanche current IAR -13 A
Repetitive avalanche energy
(Note 2a) (Note 4) EAR th19 md
Channel temperature Toh 150 "C
Storage temperature range Tstg -55 to 150 ''C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Weight: 0.080 g (typ.)
Circuit Configuration
L/rr/l-s-rl-s-r
T(QSHIIIA
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to ambient .
(t - 10 s) (Note 2a) Rm (ch-a) 65.8 C/W
Thermal resistance, channel to ambient .
(t - 10 s) (Note 2b) Rm (ch-a) 125 0/w
Marking (Note 5)
F] Fl fn
TPC8112<- Type
TPC8112
TENTAT 1 VE
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
(a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
25.4 x 25.4 x 0.8
''t (Unit: mm)
25.4 x 25.4 A 0.8
(Unit: mm)
Note 3: VDD " -24 V, Tch - 25°C (initial), L - 1.0 mH, Ra " 25 Q, IAR " -13 A
Note 4:
Note 5: . on lower left of the marking indicates Pin l.
Repetitive rating; pulse width limited by maximum channel temperature
X shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
1rC(NiillyilllBg1 TPC8112
I I I I I I I I
Electrical Characteristics (Ta - 25°C) 1 E N 1 A 1 l V E
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current lass Vas " s16 V, Vos " o V - - :10 "A
Drain cut-OFF current loss VDS - -30 V. Veg " o V - - -10 WA
V R DSS ID-1omA,Vas-o1/ -30 - -
Drain-source breakdown voltage (8 ) V
Vom)rosx ID-lotto/las-ttov -15 - -
Gate threshold voltage vm VDs - -10 V, In - -1 mA -0.8 - -2.0 V
Vas " -4 V, In - -6.5 A - 9.0 14
Drain-source ON resistance RDS (ON) m9
Vas - -10 V, ID = -6.5 A - 5.0 6.0
Forward transfer admittance lstl VDS " -10 V, ID - -6.5 A 15,5 31 - S
Input capacitance Ciss - 5880 -
Reverse transfer capacitance Gss VDs - -10 V, Vas - o V, f.. 1 MHz - 1000 - pF
Output capacitance Cass - 1050 -
Rise time t - 11 -
r 0 V ID - -6.5 A
-10 V VOUT
Turn-ON time ton G - 22 -
Switching time G g ns
Fall time tt '2 01:: - 11o -
VDD = ~15 V
Turn-OFF time tdtt Duty s 1%, tw - 10 “s - 395 -
Total gate charge - -
(gate-source plus gate-drain) 09 130
V00 2 -24 V, Vas - 10 V. nC
Gate-source charge 1 0951 ID - -13 A - 10 -
Gate-drain ("miller") charge di - 30 -
Source-Drain Ratings and Characteristics (Ta "' 25''C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse - - - _
current Pulse (Note 1) Inn]: 52 A
Fomard voltage (diode) VDSF IDR - -13 A, Vas - t) V - - 1.2 V
1rC(3iBlylllllBa TPC81 12
'l'EN'rA'l' l VE
RESTRICTIONS ON PRODUCT USE
030707EAA
. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
. The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
eta). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage) Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, trate signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
. The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
tights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
- The information contained herein is subject to change without notice.
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