TPC8106-H ,SILICON P CHANNEL MOS TYPE
TPC8106-H ,SILICON P CHANNEL MOS TYPE
TPC8106-H ,SILICON P CHANNEL MOS TYPE
TPC8112 ,MOSFET TPC Series
TPC8113 ,MOSFET TPC Series
TPC8113 ,MOSFET TPC Series
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1051 , Constant Voltage and Constant Current Controller For Battery Chargers and Adaptors
TS1084CM-3.3 , 5A Low Dropout Positive Voltage Regulator
TS1084CZ-2.5 , 5A Low Dropout Positive Voltage Regulator
TPC8106H-TPC8106-H
SILICON P CHANNEL MOS TYPE
TPC8106-H
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TPC8106−H High Speed and High Efficiency DC−DC Converters
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge : Qg = 52 nC (typ.) Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.) High forward transfer admittance : |Yfs| = 16.6 S (typ.) Low leakage current : IDSS = −10 µA (max) (VDS = −30 V) Enhancement−mode : Vth = −0.8~ −2.0 V (VDS =− 10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C) Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
Weight: 0.080 g (typ.)
Circuit Configuration
