TPC8061-H ,Power MOSFET (N-ch single VDSS≤30V)
TPC8062-H ,Power MOSFET (N-ch single VDSS≤30V)
TPC8063-H ,Power MOSFET (N-ch single VDSS≤30V)
TPC8064-H ,Power MOSFET (N-ch single VDSS≤30V)
TPC8065-H ,Power MOSFET (N-ch single VDSS≤30V)
TPC8066-H ,Power MOSFET (N-ch single VDSS≤30V)
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1051 , Constant Voltage and Constant Current Controller For Battery Chargers and Adaptors
TS1084CM-3.3 , 5A Low Dropout Positive Voltage Regulator
TS1084CZ-2.5 , 5A Low Dropout Positive Voltage Regulator
TPC8061-H
Power MOSFET (N-ch single VDSS≤30V)
TPC8061-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS VI-H)
TPC8061-H High Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.5 nC (typ.) Low drain-source ON-resistance:
RDS (ON) = 21 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
