TPC8041 ,Power MOSFET (N-ch single VDSS≤30V)
TPC8042 ,Power MOSFET (N-ch single VDSS≤30V)
TPC8045-H ,Power MOSFET (N-ch single 30V<VDSS≤60V)
TPC8045-H ,Power MOSFET (N-ch single 30V<VDSS≤60V)
TPC8046-H ,Power MOSFET (N-ch single 30V<VDSS≤60V)
TPC8047-H ,Power MOSFET (N-ch single 30V<VDSS≤60V)
TRSF3243CPWR ,3-V to 5.5-V Multichannel RS-232 Compatible Line Driver/Receiver 28-TSSOP maximum ratings" may cause permanent damage to the device. These are stress ratingsonly, and functi ..
TRSF3243IDB ,3-V to 5.5-V Multichannel RS-232 Compatible Line Driver/Receiver 28-SSOP .FUNCTION TABLES(1)EACH DRIVERINPUTSOUTPUTDRIVER STATUSVALID RINDOUTDIN FORCEON FORCEOFFRS-232 LEVE ..
TRSF3243IPWR ,3-V to 5.5-V Multichannel RS-232 Compatible Line Driver/Receiver 28-TSSOP -40 to 85FEATURESDB, DW, OR PW PACKAGE• Operates With 3-V to 5.5-V V SupplyCC (TOP VIEW)• Always-Active Noni ..
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TPC8041
Power MOSFET (N-ch single VDSS≤30V)
TPC8041 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
TPC8041 Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Note 1, Note 2, Note 3 and Note 4: See the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
Weight: 0.08 g (typ.)
Circuit Configuration 8 6
1 2 3 5
