TPC8027 ,Power MOSFET (N-ch single VDSS≤30V)
TPC8029 ,Power MOSFET (N-ch single VDSS≤30V)
TPC8035-H ,Power MOSFET (N-ch single VDSS≤30V)
TPC8036-H ,Power MOSFET (N-ch single VDSS≤30V)
TPC8039-H ,Power MOSFET (N-ch single VDSS≤30V)
TPC8039-H ,Power MOSFET (N-ch single VDSS≤30V)
TRSF3222ECDBRG4 , 3-V TO 5.5-V MULTICHANNEL RS-232 LINE DRIVER/RECEIVER WITH ±15-kV ESD PROTECTION
TRSF3222EIDW ,3-V to 5.5-V Multichannel RS-232 Line Driver/Receiver With +/-15-kV ESD Protection 20-SOIC -40 to 85FEATURESDB, DW, OR PW PACKAGE• ESD Protection for RS-232 Bus Pins(TOP VIEW)– ±15-kV Human-Body Mode ..
TRSF3223ECDBR ,3-V to 5.5-V Multichannel RS-232 Line Driver/Receiver 20-SSOP 0 to 70FEATURESDB, DW, OR PW PACKAGE• ESD Protection for RS-232 Bus Pins(TOP VIEW)–±15-kV Human-Body Model ..
TRSF3223EIDBR ,3-V to 5.5-V Multichannel RS-232 Line Driver/Receiver 20-SSOP -40 to 85Flexible control options for power management are available when the serial port is inactive. Theau ..
TRSF3232ECD ,3-V to 5.5-V Two-Channel RS-232 1-Mbit/s Line Driver/Receiver 16-SOIC 0 to 70Maximum Ratingsover operating free-air temperature range (unless otherwise noted)MIN MAX UNIT(2)V S ..
TRSF3232ECDBR ,3-V to 5.5-V Two-Channel RS-232 1-Mbit/s Line Driver/Receiver 16-SSOP 0 to 70maximum ratings" may cause permanent damage to the device. These are stress ratingsonly, and functi ..
TPC8027
Power MOSFET (N-ch single VDSS≤30V)
TPC8027 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
TPC8027 Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 2.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 48 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note 1, Note 2, Note 3 and Note 4: See the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in
the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within
the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
Weight: 0.08 g (typ.)
Circuit Configuration 8 6
1 2 3 5
