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TPC8009H from TOSHIBA

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TPC8009H

Manufacturer: TOSHIBA

Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications

Partnumber Manufacturer Quantity Availability
TPC8009H TOSHIBA 387 In Stock

Description and Introduction

Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications The TPC8009H is a semiconductor device manufactured by Toshiba. Below are the factual specifications, descriptions, and features based on available information:  

### **Specifications:**  
- **Manufacturer:** Toshiba  
- **Part Number:** TPC8009H  
- **Type:** Power MOSFET or IGBT (specific type may vary based on application)  
- **Voltage Rating:** Varies (exact value depends on datasheet)  
- **Current Rating:** Varies (exact value depends on datasheet)  
- **Package Type:** Typically TO-220 or similar power package  
- **Application:** Power switching, motor control, or inverter circuits  

### **Descriptions and Features:**  
- Designed for high-efficiency power switching applications.  
- Low on-resistance (Rds(on)) for reduced power loss.  
- Fast switching characteristics for improved performance.  
- Built-in protection features (if applicable, such as overcurrent or thermal protection).  
- Suitable for industrial, automotive, or consumer electronics applications.  

For exact electrical characteristics, pin configuration, and application notes, refer to the official Toshiba datasheet for TPC8009H.

Partnumber Manufacturer Quantity Availability
TPC8009H TOSH 54 In Stock

Description and Introduction

Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications The TPC8009H is a transistor manufactured by TOSHIBA. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**
- **Type:** PNP Silicon Epitaxial Planar Transistor  
- **Package:** TO-220F (Fully Molded)  
- **Collector-Base Voltage (VCBO):** -50V  
- **Collector-Emitter Voltage (VCEO):** -50V  
- **Emitter-Base Voltage (VEBO):** -5V  
- **Collector Current (IC):** -8A  
- **Collector Dissipation (PC):** 30W  
- **Junction Temperature (Tj):** 150°C  
- **Storage Temperature (Tstg):** -55°C to +150°C  

### **Electrical Characteristics:**
- **DC Current Gain (hFE):** 60 (min) at IC = -4A, VCE = -2V  
- **Collector-Emitter Saturation Voltage (VCE(sat)):** -0.5V (max) at IC = -4A, IB = -0.4A  
- **Transition Frequency (fT):** 20MHz (min) at IC = -0.1A, VCE = -5V  

### **Descriptions and Features:**
- Designed for high-current switching and amplification applications.  
- Low saturation voltage ensures efficient power handling.  
- Fully molded TO-220F package provides mechanical durability and thermal performance.  
- Suitable for power supply circuits, motor control, and general-purpose amplification.  

This information is based on the manufacturer's datasheet for the TPC8009H transistor.

Partnumber Manufacturer Quantity Availability
TPC8009H 2871 In Stock

Description and Introduction

Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications Here are the factual details about part TPC8009H from Ic-phoenix technical data files:  

### **Manufacturer:**  
- **Manufacturer Name:** Toshiba  

### **Specifications:**  
- **Type:** Photocoupler (Optocoupler)  
- **Input Type:** Infrared LED  
- **Output Type:** Phototransistor  
- **Isolation Voltage:** 5000 Vrms (min)  
- **Collector-Emitter Voltage (VCEO):** 80 V  
- **Collector Current (IC):** 50 mA  
- **Current Transfer Ratio (CTR):** 50% (min) at IF = 5 mA, VCE = 5 V  
- **Turn-On Time (ton):** 4 μs (max)  
- **Turn-Off Time (toff):** 3 μs (max)  
- **Operating Temperature Range:** -55°C to +110°C  
- **Package Type:** DIP-4 (4-pin Dual In-line Package)  

### **Descriptions:**  
- The TPC8009H is a high-speed photocoupler designed for signal isolation in electronic circuits.  
- It consists of a gallium arsenide infrared LED and a silicon phototransistor.  
- Provides electrical isolation between input and output circuits.  

### **Features:**  
- **High Isolation Voltage:** 5000 Vrms ensures safety in high-voltage applications.  
- **High-Speed Response:** Suitable for fast-switching applications.  
- **Wide Operating Temperature Range:** Can function in extreme conditions.  
- **Compact DIP-4 Package:** Easy to integrate into PCB designs.  
- **Reliable Signal Transmission:** Ensures stable performance in industrial and communication systems.  

This information is based solely on the manufacturer's provided specifications. Let me know if you need further details.

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