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TPC6603TOSHIBAN/a3000avaiPower transistor for high-speed switching applications


TPC6603 ,Power transistor for high-speed switching applications
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TPC6603
Power transistor for high-speed switching applications
TPC6603 TOSHIBA Transistor Silicon PNP Epitaxial Type
TPC6603

Switching Applications
DC/DC Converter Applications
Strobe Flash Applications High DC current gain: hFE = 200 to 500 (IC = −0.5 A)
• Low collector-emitter saturation: VCE (sat) = −0.19 V (max) High-speed switching: tf = 40 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)

Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
Weight: 0.01 g (typ.)
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