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TPC6601TOSHIBAN/a3000avaiTransistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications


TPC6601 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications
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TPC6601
Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications
TPC6601 TOSHIBA Transistor Silicon PNP Epitaxial Type
TPC6601

High-Speed Switching Applications
DC-DC Converter Applications High DC current gain: hFE = 200 to 500 (IC = −0.3 A) Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max) High-speed switching: tf = 90 ns (typ.)
Maximum Ratings (Ta �
�� � 25°C)
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm2)
Electrical Characteristics (Ta �
�� � 25°C)
See Figure 1 circuit diagram.
Unit: mm
Weight: 0.011 g (typ.)
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