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TPC6110TOSHIBAN/a33000avaiPower MOSFET (P-ch single)


TPC6110 ,Power MOSFET (P-ch single)
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TPC6110
Power MOSFET (P-ch single)
TPC6110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
TPC6110

Power Management Switch Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V
(VDS = −10 V, ID = −0.1mA)
Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Circuit Configuration

Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See other pages.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
Weight: 0.011 g (typ.)
6 4
1 2 3
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