TPC6109-H ,Power MOSFET (P-ch single)
TPC6109-H ,Power MOSFET (P-ch single)
TPC6110 ,Power MOSFET (P-ch single)
TPC6201 ,Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) HDD Motor Drive Applications Notebook PC Applications Portable Equipment Applications
TPC6201 ,Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) HDD Motor Drive Applications Notebook PC Applications Portable Equipment Applications
TPC6601 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications
TRS232 ,Dual RS-232 Driver/Receiver With IEC61000-4-2 Protection 16-SOIC 0 to 70FEATURES2• Meets or Exceeds TIA/RS-232-F and ITUD, DW, N, NS, OR PW PACKAGERecommendation V.28(TOP ..
TRS232DR ,Dual RS-232 Driver/Receiver With IEC61000-4-2 Protection 16-SOIC 0 to 70maximum ratings" may cause permanent damage to the device. These are stress ratingsonly, and functi ..
TRS232ECD ,Dual RS-232 Driver/Receiver With IEC61000-4-2 Protection 16-SOIC 0 to 70ORDERING INFORMATION(1)(2)T PACKAGE ORDERABLE PART NUMBER TOP-SIDE MARKINGAPDIP – N Tube of 25 TRS2 ..
TRS232ECDR ,Dual RS-232 Driver/Receiver With IEC61000-4-2 Protection 16-SOIC 0 to 70/packaging.(2) For the most current package and ordering information, see the Package Option Addend ..
TRS232ECDW ,Dual RS-232 Driver/Receiver With IEC61000-4-2 Protection 16-SOIC 0 to 70Maximum Ratingsover operating free-air temperature range (unless otherwise noted)MIN MAX UNIT(2)V I ..
TRS232ECN ,Dual RS-232 Driver/Receiver With IEC61000-4-2 Protection 16-PDIP 0 to 70FEATURES2• Meets or Exceeds TIA/RS-232-F and ITUD, DW, N, NS, OR PW PACKAGERecommendation V.28(TOP ..
TPC6109-H
Power MOSFET (P-ch single)
TPC6109-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC6109-H High-Efficiency DC-DC Converter Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 44 mΩ (typ.)
(VDS = −10 V) High forward transfer admittance: |Yfs| = 8.0 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C) significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
Thermal Characteristics Circuit Configuration Note: For Notes 1 to 5, see page 3.
Caution: This transistor is an electrostatic-sensitive device. Handle with care.
Weight: 0.011 g (typ.)
6 4
1 2 3
