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TP0205AD
P-Channel 20-V MOSFET
VISHAY
TP0205AIAD
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET, Low-Threshold
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (mA)
3.8 @ VGS = -4.5 V -180
-20 5.0 @ sz = -2.5 v -100
FEATURES BENEFITS
o High-Side Switching q Ease in Driving Switches
. Low On-Resistance: 2.6 C2 (typ) q Low Offset (Error) Voltage
q Low Threshold: 0.9 V (typ) q Low-Voltage Operation
0 Fast Switching Speed: 35 ns q High-Speed Circuits
o 2.5 V or Lower Operation q Low Battery Voltage Operation
SOT-323
SC-70 (3-Leads)
s A? 5"
Order Number:
TP0205A
SOT-363
SC-70 (6-Leads)
D2 ”{IMLJ_ S2
Order Number:
TP0205AD
APPLICATIONS
q Drivers: Relays, Solenoids, Lamps,
Hammers, Display, Memories
. Battery Operated Systems
q Load/Power Switching-Cell Phones,
Marking Code:
G2 TP0205A: AI
TP0205AD: Cwl
w = Week Code
" Lot Traceability
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol TP0205A TP0205AD Unit
Drain-Source Voltage VDS -20
Gate-Source Voltage VGs i 8
TA = 25°C -180
Continuous Drain Current (To = 150°C)3 ID
TA = 70°C -140 mA
Pulsed Drain Current IBM -500
TA = 25°C 0.15 0.20 (Total)
Maximum Power Dissipation" TA = 70°C PD 010 0.13 (Total) W
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol TP0205A TP0205AD Unit
Thermal resistance, Junction-’to-Ambienta RthJA 833 625 (Total) °C/W
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70869 www.vishaycom
S-04279-Rev. B, 16-Jul-01
TP0205AIAD
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typb Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS Vos = 0 V, ID = -10 “A -20 -24
Gate-Threshold Voltage VGS(th) VDs = VGS, ID = -50 “A AM -0.9 -1.5
Gate-Body Leakage less VDS = 0 V, VGS = l 8 V l 2 i 100
Vos = -20 V, VGS = O V Ah001 -100
Zero Gate Voltage Drain Current IDSS
VDS = -20 V, VGS = 0 V, To = 55°C -1 11A
Kas = -4.5 V, VDS = -8.0 V -400
On-State Drain Currenta Imam) mA
VGS = -2.5 V, VDs = -5.0 V -120
VGS = -A.5 V, ID = -180 mA 2.6 3.8
Drain-Source On-State Resistancea rDS(on) Q
VGS = -2.5 v, ID = -75 mA 4.0 5.0
Forward Transmonductancea gfs VDs = -2.5 V, ID = -50 mA 200 mS
Diode Forward Voltagea VSD ls = -50 mA, VGS = O V AJ.? -1.2 V
Dynamic
Total Gate Charge Qg 350 450
Gate-Source Charge Qgs Vos = -5.0 V, VGS = -A.5 V, ID = -100 mA 25 pC
Gate-Drain Charge di 125
Input Capacitance Ciss 20
Output Capacitance Coss VDS = -5.0 V, VGS = 0 V, f= 1 MHz 14 pF
Reverse Transfer Capacitance Crss 5
Switching C
Turn-On Delay Time tam) 7 12
Rise Time tr VDD = -3.0 V, RL = 100 Q 25 35 ns
Turn-Off Delay Time tum) ID = -0.25 A, VGEN = -4.5 V, Rs = 10 C2 19 30
Fall Time tf 9 15
a. Pulse test; pulse width 5 300 us, duty cycle 5 2%. VPOJ
b. For design only, not subject to production testing.
C. Switching time is essentially independent of operating temperature.
www.vishay.com
Document Number: 70869
S-04279-Rev. B, 16-Jul-01
In — Drain Current
rosmn) — On-Resistance ( Q )
VGS — Gate-to-Source Voltage (V)
VISHAY
TP0205AIAD
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Output Characteristics
Transfer Characteristics
-0.5 l
T J = -55''C
- 25°C
g 's /
3 Ah3 I
D ty 125 C
0 -1 -2 -3 -4 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0
N/os - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
I/ss = 0 V
f= 1 MHz
Vss = -2.5 v g
t):''s, Ciss
8 18 a
O Ns, Coss
9 -_-,
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 0 -3 -6 -9 -12
ID - Drain Current (A) I/os - Drain-to-Source Voltage (V)
10 Gate Charge 1 6 On-Resistance vs. Junction Temperature
Vros---6V / VGs---45V s,,,,,,,.''''''''
-8 - ID=8OmA pr a 1.4 - lro---180 mA ',,,,,,W''
-E .1r_i 6 1.2
-4 / I 1.0
w'''" Sc]
-2 _// 0.8 w,,,-'''''
0 100 200 300 400 500 600 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (pC) To - Junction Temperature CC)
Document Number: 70869 www.vishaycom
S-04279-Rev. B, 16-Jul-01
TP0205AIAD
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage
To = 150°C
.if: AJ.1
, -0.01
0.00 -0.5 -1.0
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
j) ko=-180mA
io)' 3
6 "s..
1.5 -1.0 -1.5 Al.0 Al.5 -3.0 -3.5 -A.0 -A.5
Threshold Voltage
Ves - Gate-to-Source Voltage (V)
0.3 l I
b---50WA w,,,,,-'''''''
0.2 //
gi' 0.0
> w,,,,,,-'''''''
-50 -25 0 25 50 75 100 125 150
T: - Junction Temperature (°C)
www.vishay.com
Document Number: 70869
S-04279-Rev. B, 16-Jul-01
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