TN6725A ,NPN Darlington Transistorapplications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C ..
TN6725A ,NPN Darlington Transistorapplications requiring extremely high current gain at collector currents to 1A. from Process 05 ..
TN6725A ,NPN Darlington TransistorTN6725A Discrete Power & Signal Technologies TN6725AC TO-226 B E NPN Darl ..
TN6726A ,PNP General Purpose AmplifierTN6726A / NZT6726TN6726A NZT6726CECBTO-226CB SOT-223EPNP General Purpose AmplifierThis device is de ..
TN6726A ,PNP General Purpose AmplifierTN6726A / NZT6726TN6726A NZT6726CECBTO-226CB SOT-223EPNP General Purpose AmplifierThis device is de ..
TN6726A ,PNP General Purpose Amplifierapplications involving pulsed or low duty cycle operations.3) All voltages (V) and currents (A) are ..
TPS7301QD ,Lowest Dropout (LDO) PMOS Voltage Regulator with Integrated Supply Voltage Supervisorblock diagramINRESISTOR DIVIDER OPTIONSDEVICE R1 R2 UNIT¶¶ ¶ENTPS7301 0 ∞ WTPS7325 260 233 kWRESETT ..
TPS7301QDR ,Lowest Dropout (LDO) PMOS Voltage Regulator with Integrated Supply Voltage Supervisorblock diagramINRESISTOR DIVIDER OPTIONSDEVICE R1 R2 UNIT¶¶ ¶ENTPS7301 0 ∞ WTPS7325 260 233 kWRESETT ..
TPS7301QDRG4 ,500mA, Low-Dropout Voltage Regulators with Integrated Delay Reset Function 8-SOIC -40 to 125TPS7301Q, TPS7325Q, TPS7330Q, TPS7333Q, TPS7348Q, TPS7350Q LOW-DROPOUT VOLTAGE REGULATORSWITH INTEG ..
TPS7301QPW ,Lowest Dropout (LDO) PMOS Voltage Regulator with Integrated Supply Voltage Supervisorblock diagramINRESISTOR DIVIDER OPTIONSDEVICE R1 R2 UNIT¶¶ ¶ENTPS7301 0 ∞ WTPS7325 260 233 kWRESETT ..
TPS73025DBVR ,Low-Noise, High PSRR, RF 200-mA Low-Dropout Linear Regulatorfeatures• Handheld Organizers, PDAsas well as the fast response time.(1)Device InformationPART NUMB ..
TPS73025DBVRG4 ,LOW-NOISE, HIGH PSRR, RF 200-mA LOW-DROPOUT LINEAR REGULATORSfeatures• Handheld Organizers, PDAsas well as the fast response time.(1)Device InformationPART NUMB ..
TN6725A
NPN Darlington Transistor
TN6725A Discrete Power & Signal Technologies TN6725A C TO-226 B E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1A. from Process 05. See for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units Collector-Emitter VoltageV V V VCBO Emitter-Base VoltageV V - Continuous1.2A IC -55 to +150 TJ, Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Max Characteristic Symbol Units TN6725A Total Device Dissipation1W PD 8mW/°C Thermal Resistance, Junction to Case°C/W RqJC Thermal Resistance, Junction to Ambient°C/W RqJA Ó 1997 Rev ATN6725A, 125 50 above 25°C Derate °COperating and Storage Junction Temperature Range Collector Current EBO 12 60Collector-Base Voltage CES 50 MPSA14 Sourced
