TN6717A ,NPN General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
TN6717A ,NPN General Purpose AmplifierTN6717A / NZT6717TN6717A NZT6717CECBTO-226CB SOT-223ENPN General Purpose AmplifierThis device is de ..
TN6718A ,NPN General Purpose AmplifierTN6718A TN6718AC TO-226 B E NPN General Purpose Amplifier This device is ..
TN6719A ,NPN High Voltage Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
TN6725A ,NPN Darlington Transistorapplications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C ..
TN6725A ,NPN Darlington Transistorapplications requiring extremely high current gain at collector currents to 1A. from Process 05 ..
TPS73001DBVTG4 ,LOW-NOISE, HIGH PSRR, RF 200-mA LOW-DROPOUT LINEAR REGULATORSfeatures high power-supplyWith Enablerejection ratio (PSRR), low noise, fast start-up, and• Availab ..
TPS73018DBVR ,Low-Noise, High PSRR, RF 200-mA Low-Dropout Linear RegulatorBlock Diagrams... 912 Mechanical, Packaging, and Orderable7.3 Feature Description.... 10Information ..
TPS73018DBVRG4 ,LOW-NOISE, HIGH PSRR, RF 200-mA LOW-DROPOUT LINEAR REGULATORSElectrical Characteristics ...... 511.2 Documentation Support.... 186.6 Typical Characteristics. 61 ..
TPS73018DBVT ,Low-Noise, High PSRR, RF 200-mA Low-Dropout Linear RegulatorMaximum Ratings(1)over operating junction temperature range (unless otherwise noted)MIN MAX UNITInp ..
TPS73018DBVTG4 ,LOW-NOISE, HIGH PSRR, RF 200-mA LOW-DROPOUT LINEAR REGULATORS SBVS054J–NOVEMBER 2004–REVISED APRIL 20155 Pin Configuration and FunctionsDBV PackageDBV Package5- ..
TPS7301QD ,Lowest Dropout (LDO) PMOS Voltage Regulator with Integrated Supply Voltage Supervisorblock diagramINRESISTOR DIVIDER OPTIONSDEVICE R1 R2 UNIT¶¶ ¶ENTPS7301 0 ∞ WTPS7325 260 233 kWRESETT ..
TN6717A
NPN General Purpose Amplifier
TN6717A / NZT6717 TN6717A NZT6717 C E C B TO-226 C B SOT-223 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 39. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 80 V CEO V Collector-Base Voltage 80 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 1.2 A C Operating and Storage Junction Temperature Range -55 to +150 C T , T ° J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units TN6717A *NZT6717 P Total Device Dissipation 1.0 1.0 W D Derate above 25°C 8.0 8.0 mW/°C R Thermal Resistance, Junction to Case 50 °C/W θJC R Thermal Resistance, Junction to Ambient 125 125 °C/W θJA 2 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm . 1997
