TN6715A ,NPN General Purpose AmplifierTN6715A / NZT6715TN6715A NZT6715CECBTO-226CB SOT-223ENPN General Purpose AmplifierThis device is de ..
TN6716A ,NPN General Purpose AmplifierTN6716A TN6716AC TO-226 B E NPN General Pu ..
TN6717A ,NPN General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
TN6717A ,NPN General Purpose AmplifierTN6717A / NZT6717TN6717A NZT6717CECBTO-226CB SOT-223ENPN General Purpose AmplifierThis device is de ..
TN6718A ,NPN General Purpose AmplifierTN6718A TN6718AC TO-226 B E NPN General Purpose Amplifier This device is ..
TN6719A ,NPN High Voltage Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
TPS728185315YZUT ,Single Output LDO, 200mA, Dual Level Fixed with Vset Pin 5-DSBGA -40 to 125FEATURES DESCRIPTION2• Very Low Dropout: 230mV Typical at 200mAThe TPS728xx series of low-dropout l ..
TPS73001DBVR ,Low-Noise, High PSRR, RF 200-mA Low-Dropout Linear Regulatorfeatures high power-supplyWith Enablerejection ratio (PSRR), low noise, fast start-up, and• Availab ..
TPS73001DBVRG4 ,LOW-NOISE, HIGH PSRR, RF 200-mA LOW-DROPOUT LINEAR REGULATORSMaximum Ratings condition statement . 4• Deleted Dissipation Ratings table; added Thermal Informati ..
TPS73001DBVT ,Low-Noise, High PSRR, RF 200-mA Low-Dropout Linear RegulatorMaximum Ratings.. 410.3 Thermal Considerations.... 166.2 ESD Ratings ...... 410.4 Power Dissipation ..
TPS73001DBVTG4 ,LOW-NOISE, HIGH PSRR, RF 200-mA LOW-DROPOUT LINEAR REGULATORSfeatures high power-supplyWith Enablerejection ratio (PSRR), low noise, fast start-up, and• Availab ..
TPS73018DBVR ,Low-Noise, High PSRR, RF 200-mA Low-Dropout Linear RegulatorBlock Diagrams... 912 Mechanical, Packaging, and Orderable7.3 Feature Description.... 10Information ..
TN6715A
NPN General Purpose Amplifier
TN6715A / NZT6715 TN6715A NZT6715 C E C B TO-226 C B SOT-223 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO V Collector-Base Voltage 50 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 1.5 A C Operating and Storage Junction Temperature Range -55 to +150 T , T °C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units TN6715A *NZT6715 P Total Device Dissipation 1.0 1.0 W D Derate above 25°C 8.0 8.0 mW/°C Thermal Resistance, Junction to Case 50 R °C/W θJC R Thermal Resistance, Junction to Ambient 125 125 C/W θ ° JA 2 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm . 1997
