TN6707A ,NPN General Purpose AmplifierTN6707ATN6707ANPN General Purpose Amplifier These devices is designed for general purpose medium p ..
TN6714A ,NPN General Purpose AmplifierTN6714A / NZT6714TN6714A NZT6714CECBTO-226CSOT-223BENPN General Purpose AmplifierThis device is des ..
TN6715A ,NPN General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
TN6715A ,NPN General Purpose AmplifierTN6715A / NZT6715TN6715A NZT6715CECBTO-226CB SOT-223ENPN General Purpose AmplifierThis device is de ..
TN6715A ,NPN General Purpose AmplifierTN6715A / NZT6715TN6715A NZT6715CECBTO-226CB SOT-223ENPN General Purpose AmplifierThis device is de ..
TN6716A ,NPN General Purpose AmplifierTN6716A TN6716AC TO-226 B E NPN General Pu ..
TPS72728DSER ,250-mA, Ultralow IQ, Fast Transient Response, RF Low-Dropout Linear Regulator 6-WSON -40 to 125Electrical Characteristics....... 611.2 Community Resources...... 226.6 Typical Characteristics. 71 ..
TPS72728YFFR ,250-mA, Ultralow IQ, Fast Transient Response, RF Low-Dropout Linear Regulator 4-DSBGA -40 to 125Block Diagram... 1112 Mechanical, Packaging, and Orderable7.3 Feature Description.... 11Information ..
TPS728185315YZUR ,Single Output LDO, 200mA, Dual Level Fixed with Vset Pin 5-DSBGA -40 to 125ELECTRICAL CHARACTERISTICSOver operating temperature range (T = –40°C to +125°C), V = V + 0.5V or 2 ..
TPS728185315YZUT ,Single Output LDO, 200mA, Dual Level Fixed with Vset Pin 5-DSBGA -40 to 125FEATURES DESCRIPTION2• Very Low Dropout: 230mV Typical at 200mAThe TPS728xx series of low-dropout l ..
TPS73001DBVR ,Low-Noise, High PSRR, RF 200-mA Low-Dropout Linear Regulatorfeatures high power-supplyWith Enablerejection ratio (PSRR), low noise, fast start-up, and• Availab ..
TPS73001DBVRG4 ,LOW-NOISE, HIGH PSRR, RF 200-mA LOW-DROPOUT LINEAR REGULATORSMaximum Ratings condition statement . 4• Deleted Dissipation Ratings table; added Thermal Informati ..
TN6707A
NPN General Purpose Amplifier
TN6707A TN6707A NPN General Purpose Amplifier These devices is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0A Sourced from process 39. C TO-226 B E Absolute Maximum Ratings* T =25°C unless otherwise noted A Symbol Parameter FPN660 Units V Collector-Emitter Voltage 80 V CEO V Collector-Base Voltage 100 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 1.2 A C T , T Operating and Storage Junction Temperature Range -55 ~ +150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted A Symbol Parameter Test Conditions Min. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage * I = 10mA, I = 0 80 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 100μA, I = 0 100 V (BR)CBO E E V Emitter-Base Breakdown Voltage I = 1.0mA, I = 0 5.0 V (BR)EBO E C I Collector-Base Cutoff Current V = 80V, I = 0 0.1 μA CBO CB E I Emitter-Base Cutoff Current V = 5.0V, I = 0 0.1 μA EBO EB C On Characteristics * h DC Current Gain V = 2.0V, I = 50mA 40 FE CE C V = 2.0V, I = 250mA 40 250 CE C V = 2.0V, I = 500mA 25 CE C V (sat) Collector-Emitter Saturation Voltage I = 500mA, I = 50mA 0.5 V CE C B I = 1.0A, I = 100mA 1.0 V C B V (on) Base-Emitter On Voltage V = 2.0V, I = 1.0A 1.5 V BE CE C Small Signal Characteristics h Output Capacitance V = 5.0V, I = 200mA, f = 20MHz 2.5 20 MHz fe CE C f Current Gain Bandwidth Product V = 5.0V, I = 50mA, f = 20MHz 50 MHz T CE C * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% Thermal Characteristics T =25°C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 1.0 W D Derate above 25°C 8.0 mW/°C R Thermal Resistance, Junction to Case 50 °C/W θJC R Thermal Resistance, Junction to Ambient 125 °C/W θJA ©2003 Rev. A, January 2003
