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TN41A
PROGRAMMABLE UNI JUNCTION TRANSISTOR SILICON PLANAR NPN THYRISTOR-TRIGGER, RELAXATION OSCILLATOR, PULSER AND TIMER APPLICATIONS
TOSHIBA TN41A,TN41B
TOSHIBA PROGAMMABLE UNI JUNCTION TRANSISTOR SILICON PLANAR TYPE
TNMA, TNM
THYRISTOR-TRIGGER, RELAXATION OSCILLATOR, PULSER AND TIMER Unit in mm
APPLICATIONS
¢5_1MAx.
0 Low Leakage Current : IGA0=10nA (Max.) l ii,
IGKS-- 100nA (Max.) 0.115 l -
0 High Pulse Output Voltage : VQ=IOV (Typ.) 0-551 l i Q Q E
0.45 ' , 0 '2
o Low Peak Current .. IP=2PA (Max.) TN41A (RG--1MQ) , ris,':, -
IP=0.15PA (Max.) TN41B (RGlen)
MAXIMUM RATINGS m L27 l.27
CHARACTERISTIC SYMBOL RATING UNIT l a mom 3
1 2 3 _-
Gate-Cathode Forward Voltage VGKF 40 V q
Gate-Cathode Reverse Voltage VGKR -5 V
Gate-Anode Reverse Voltage VGAR 40 V l. ANODE
Anode-Cathode Voltage VAK i40 V g ESTTEODE
DC Anode Current (Note 1) IT 150 mA
. . JEDEC TO-92
Repetitive Peak tw = 100ps 1
Forward Current ITM A EIAJ SC-43
(1% Duty Cycle) tw=10ps 2 TOSHIBA 13-5A1C
Non-Repetitive Peak Forward . .
I A Weight . 0.2g
Current (tw= 10ps) TSM 5
DC Gate Current (Note 1) lg :20 mA
Capacitive Discharge Energy
(Note 2) E 250 /dl
Power Dissipation (Note 1) P 300 mW
Operating Temperature Topr -50--100 T
Junction Temperature Tj -50-125 ''C
Storage Temperature Range Tstg -50-125 T
961 001 EAA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operatin ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and con itions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual propert or other rights of the third
parties which may result from its use. No license is granted by implication or ot erwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
2000-04-03 1/4
TOSHIBA TN41A,TN41B
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
FIGURE No. TN41A TN41B
CHARACTERISTIC SYMBOL AND UNIT
CONDITION MIN. TYP. MAX. MIN. TYP. MAX.
Peak Current RG = 111n - 0.05 2 - 0.01 0.15
(VS = 10V) RG-- 10kf1 Ip l, 2, 3 - 1.0 5 - 0.35 1.0 PA
Offset Voltage RG = IMn 0.2 0.35 1.6 0.2 0.35 0.6
VT 1, 2, 3 V
(VS = 10V) RG = 10kf1 0.2 0.45 0.6 0.2 0.45 0.6
Valley Current RC, = IMn - 15 50 - 7 25
(VS = 10V) RG-- lOkQ IV l, 2, 3 70 200 - 25 160 - PA
Gate-Anode Leakage Current IGAO 4, VS =40V - 0.03 10 - 0.03 10 nA
Gate-Cathode Leakage Current IGKS 5, VS =40V - 0.3 100 - 0.3 100 nA
Forward Voltage VF IF = 50mA - 1 1.5 - 1 1.5 V
Pulse Output Voltage vo 6, 7 6 10 - 6 10 - V
Pulse Voltage Rise Time tr 6, 7 - 70 80 - 70 80 ns
(Note 1) Derate linearly current and powers 1%/ T above 25°C.
(Note 2) E--0.5.CV2 capacitor discharge energy limiting resistor and repetition.
2000-04-03 2/4
TOSHIBA
m , _i'
VA H. WV
ptti'w -
Fig.1 Programmable UJT
with program
resistor R1 and R2
._IGA0 -IGKS
Fig.4 IGAO test
Fig.5 IGKS test
circuit circuit
Ip _ RG (TYP.)
Vs=10V
3000 Ta=25°C
V 1000
ttttet 100
0.1 0.3 1 3 10 30 100 300 1000 3000
GATE SOURGE IMPEDANCE RG (k0)
Fig.2 Equivalent test circuit for
figure 1 used for electrical
characteristic testing
0. 2,uF 510k0
Fig.6 vo and tr
test circuit
PEAK CURRENT 1p (,uA)
TN41A,TN41 B
Ip IV IF
Fig.3 V-I electrical
characteristics
Fig.7 Waveform of vo
and tr
Ip - Ta (TYP.)
-50 -30
-10 10 30 50 70 90
AMBIENT TEMPERATURE Ta (°C)
2000-04-03 3/4
TOSHIBA
TN41A,TN41 B
(TYP.)
VALLEY CURRENT Iv (,uA)
-50 -30 -10 10 30 50 70 90
AMBIENT TEMPERATURE Ta (°C)
IGKS - Ta (TYP.)
'iiiili. 3
E; 0.3
F 0.03
< 0.01
O 0.005
-40 -20 0 20 40 60 80 100 120 140
AMBIENT TEMPERATURE Ta (°C)
PULSE OUTPUT VOLTAGE V0 (V)
0.001 0.003 0.01 0.03 0.1 0.3 l 3 10
CAPACITANCE C (pF)
IGAO (PA) OFFSET VOLTAGE VT (V)
GATE TO ANODE LEAKAGE CURRENT
PULSE OUTPUT VOLTAGE V0 (V)
VT - RG (TYP.)
Ta = - 50°C
1 3 10 30 100 300 1000
GATE SOURGE IMPEDANCE RG (k0)
IGAO - Ta (TYP.)
-40 -20 0 20 40 60 80 100 120 140
AMBIENT TEMPERATURE Ta (°C)
V0 - VD (TYP.)
"arg. 5:;
H = C=0.2 F
ct, U9 /2
18 > .- f sf, ty''
==O g ,r'vo'2it-',
12 Ta=25°C I O‘OV
// w''''''' 1
// ,,,,,w" 0.00/
6 " _,,,.,-"''
Aft:',';'',,"-----"'''''"'
'tCs''-'---''"
00 10 20 30 40 50
SUPPLY VOLTAGE VD (V)
2000-04-03 4/4
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