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TN3012L
Enhancement-Mode MOSFET Transistors
VISHAY
TN3012L
Vishay Siliconix
N-Channel 300-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS Min (V) rDS(on) Max (Q) VGS(th) (V) ID (A)
12 @ VGS = 10 v
300 0.8 to 3 0.18
20 @ VGS = 4.5 v
FEATURES BENEFITS APPLICATIONS
q Low On-Resistance: 9 Q . Low OffsetVoItage o High-Voltage Drivers: Relays, Solenoids,
0 Secondary Breakdown Free: 320 V o Full-Voltage Operation Lamps, Hammers, Displays, Transistors, etc.
0 Low Power/Voltage Driven q Easily Driven 1/Mthout Buffer q Telephone Mute Switches, Ringer Circuits
q Low Input and Output Leakage q Low Error Voltage . Power Supply, Converters
. Excellent Thermal Stability o No High-Temperature q Motor Control
"Run-Away"
TO-226AA
(TO-92)
Top Vew
Device Marking
Front View
"S" TN
"S" = Siliconix Logo
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 300 V
Gate-Source Voltage l/ss :20
TA-- 2500 0.18
Continuous Drain Current (TJ = 150°C) ID
TA-- 100°C 0.14 A
Pulsed Drain Currenta IDM 0.5
TA-- 25'C 0.8
Power Dissipation PD W
TA-- 100°C 0.32
Maximum Junction-to-Ambient RNA 156 °CNV
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 ''C
a. Pulse width limited by maximumjunction temperature.
Document Number: 70206 www.vishay.com
S-04279-Rev. C, 16-Jul-01
TN3012L
VISHAY
Vishay Siliconix
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = O V, ID = 10 [1A 300 320
Gate-Threshold Voltage Vegan) VDS = N/ss, ID = 0.25 mA 0.8 2.1 3.0
Gate-Body Leakage less VDS = 0 V, VGS = ce20 V 21:10 nA
VDS=120V.VGS=0V 0.1
Zero Gate Volta e Drain Current I
g DSS TA = 125°C 5 "A
On-State Drain Currentb low”) VDs = 5 V, VGS = 10 V 0.2 0.5 A
VGS=10V,ID=O.18A 9 12
Drain-Source On-Resistanceb rDS(on) VGS = 4.5 V, ID = 0.14 A 11 20 Q
TA = 125°C 20 40
Forward Transconductance' gfs Vros = 15 V, ID = 0.1 A 160 mS
Diode Forward Voltage VSD Is = 0.18 A, Ves = 0 V 0.8 V
Dynamic
Total Gate Charge % 3300
Gate-Source Charge Qgs VDs = 50 V, VGS = 10 V, ID a 100 mA 38 pC
Gate-Drain Charge di 1600
Input Capacitance Ciss 40
Output Capacitance Coss VDS = 50 V, VGS = 0 V, f= 1 MHz 8 pF
Reverse Transfer Capacitance Crss 3
Switchingc
td(on) 5 10
Turn-On Tlme
tr VDD = 50 v, RL = 500 Q , ID 2100 mA 20 40 ns
td(off) VGEN = 10 V, Rs = 25 Q 25 50
Turn-tMTV
tf 30 60
VNAS3O
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW 5300 115 duty cycle 52%.
C. Switching time is essentially independent of operating temperature.
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DocumentNumber: 70206
S-04279-Rev. C, 16-Jul-01
VISHAY
TN3012L
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
rDS(on) — On-Resistance ( Q )
| D — Drain Current (A)
rDS(on) — On-Resistance ( £2 )
(Normalized)
Output Characteristics
1.0 I [
I/ss = 10, 8 It,ir,ee's'ii';li'
'gt''''" 5 v
0.6 ‘f
0 4 8 12 16 20
I/os - Drain-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage
N \D = 0.5 A
8 - ID = 0.1 A
0 4 8 12 16 20
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0 /I/
0.5 4/
-50 -25 0 25 50 75 100 125 150
To - Junction Temperature CC)
| D — Drain Current (A)
I’DS(on) — On-Resistanoe (
VGS(th)— Threshold Voltage (V)
Transfer Characteristics
I 2 25°C
TA = -551
0.8 ll
0 2 4 6 8 IO
N/ss - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 4.5 V I
Ves Cs,,),,-'''''
0 0.2 0.4 0.6 J8 1.0
ID - Drain Current (A)
Threshold Voltage Variance Over Temperature
2 a"'''''-----.... ID = 1 mA
-50 -25 0 25 50 75 100 125 150
To - Junction Temperature (°C)
DocumentNumber: 70206
S-04279-Rev. C, 16-Jul-01
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Capacitance Gate Charge
200 10
i ID = 0.1 A /
160 E 8
k 2 /"
g 120 8 6 l
cu. ' Vos = 150 V
m p, I
O 80 d, 4
I Irs'
o k C ,
40 _-_, 8 2 l
Coss >
0 10 20 30 40 50 0 500 1000 1500 2000 2500 3000 3500
V03 - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
/ TJ=150°C
tii'.]
g 0.01
0 0.5 1.0 1.5 2.0 2.5
VSD - Source-to-Drain Voltage (V)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 1o-3 ut-e IO-I 1 10
Square Wave Pulse Duration (sec)
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DocumentNumber: 70206
S-04279-Rev. C, 16-Jul-01
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