TN2460L ,Enhancement-Mode MOSFET TransistorsS-04279—Rev. D , 16-Jul-0111-3r – Drain-Source On-Resistance ( Ω )DS(on)I – Drain Current (mA)(Norm ..
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TN2460L-TN2460T
Enhancement-Mode MOSFET Transistors
VISHAY
TN2460LITN2460T
Vishay Siliconix
N-Channel 240-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number V(BR)DS$ Min (V) rDS(on) Max (Q) VGS(th) (V) ID Min (mA)
TN2460L 240 60 @ Vss = 10 v 0.5 to 1.8 75
TN2460T 60 @ VGS = 10 v 0.5 to 1.8 51
FEATURES BENEFITS APPLICATIONS
0 Low On-Resistance: 40 Q q Low OffsetVoltage o High-Voltage Drivers: Relays, Solenoids,
q Secondary Breakdown Free: 260 V o Full-Voltage Operation Lamps, Hammers, Displays,
q Low Power/Voltage Driven . Easily Driven 1/Mthout Buffer Transistors, etc. . . . .
q Low Input and Output Leakage . Low Error Voltage q Telephone Mute Switches, Ringer Circuits
. Excellent Thermal Stability . No High-Temperature q Power Supply, Converters
"Run-Away"
TO-226AA
(TO-92)
s Device Marking
Front View
"S" TN
G 2406L
D "S" = Siliconix Logo
xxyy = Date Code
Top View
TN2460L
0 Motor Control
TO-236
(SOT-23)
Marking Code: T2w/I
T2 = Part Number Code for TN2460T
3 I D w = Week Code
s I I I I ll=LotTraceability
Top bfme
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol TN2460L TN2460T Unit
Drain-Source Voltage VDS 240 240 V
Gate-Source Voltage VGS i20 ce20
TA-- 25°C 75 51
Continuous Drain Current (T: = 150°C) ID
TA-- 100°C 48 32 mA
Pulsed Drain Currenta IBM 800 400
TA-- 25°C 0.8 0.36
Power Dissipation PD W
TA-- 100°C 0.32 0.14
Thermal Resistance, Junction-to-Ambient RthJA 156 350 °C/W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
a. Pulse width limited by maximumjunction temperature.
DocumentNumber: 70205
S-04279-Rev. D , 16-Jul-01
www.vishaycom
TN2460LITN2460T
Vishay Siliconix
VISHAY
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 MA 240 260
Gate-Threshold Voltage VGS(th) VDs = Kas, ID = 250 MA 0.5 1.65 1.8
VDS=OV,VGS=:t20V 110
Gate-Bod Leaka e I nA
y g GSS l TJ=125°C i5
VDS=120V,VGS=0V 0.1
Zero Gate Volta e Drain Current ID
g ss l TJ = 125°C 5 WA
VDS=10 V,VGS=10V 75 140
On-State Drain Currentb ID(on) mA
V03: 10 V,VGS=4.5V 20 130
Ves = 10 V, ID = 0.05 A 38 60
Drain-Source On-Resistanceb rDS(on) VGS = 4.5 V, ID = 0.02 A 40 60 Q
TJ = 125''C 75 120
Forward Transconductanctp gfs Vos = 10 V, ID = 0.05 A 30 70 mS
Dynamic
Input Capacitance Ciss 14 3O
Output Capacitance Coss VDs = 25 V, VGS = 0 V, f= 1 MHz 4 15 pF
Reverse Transfer Capacitance Crss 1 10
Switching'
Turn-On Tlme tON VDD = 25 V, RL = 500 Q 8 20 ns
Turn-ofthe tOFF ID 2 0.05 A, VGEN = 10 V, Rs = 25 Q 20 35
a. For DESIGN AID ONLY, not subject to production testing. VNDN24
b. Pulse test: PW :80 us duty cycle 51%.
C. Switching time is essentially independent of operating temperature.
www.vishay.com
DocumentNumber: 70205
S-04279-Reu. D , 16-Jul-01
VISHAY
TN2460LITN2460T
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
ID — Drain Current (mA)
rDS(0n) — On-Resistance ( Q )
mm") — Drain-Source On-Resistance ( (2)
(Normalized)
Output Characteristics
VGs=1[)l://
/,,,,,,,,,,,,,,,,,,,v,',c''i''-''i'c1"--''''---
sf J,',''''''"
---"""'"
0 4 8 12 16 20
I/os - Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
ID: 100 mA
0 4 8 12 16 20
Vss - Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
VGS = 4.5V
- ID: 50 mA
-50 -1 O 30 70 110 150
To - Junction Temperature CC)
Transfer Characteristics
100 I I
To-- -55''C Al} 25°C
g / 125°C
ii" 60
Vos = 15 v
O 1 2 3 4 5
VGS - Gate-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 10 V
.25 75
, 50 m,,,,,,,,,-''''"
Jr o,.,--'''''
0 50 100 150 200 250
ID - Drain Current(A)
Threshold Region
ID — Drain Current (mA)
0.75 1 1.25 1.5 1.75 2 2.25 2.5
l/ss - Gate-Source Voltage (V)
Document Number: 70205
S-04279-Rev.
D , 16-Jul-01
www.vishay.com
TN2460LITN2460T VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Capacitance Gate Charge
20 I 15.0 I I
V s = O V ID = 30 mA
f= 1 MHz
12.5 /
A Ciss ii,
',li., k "--- (z'-'; 10.0 /
g 12 i; /''"
to' g 7.5 op''
'r!', u? w'''"
8 8 , Cass Sl Vros = 100 v
O m 5.0
('9 /'''" 192 v
4 l U)
0 10 20 30 40 50 O 50 100 150 200 250 300
Vos - Drain-to-Source Voltage (V) Qg - Total Gate Charge (pC)
Load Condition Effects on Switching Drive Resistance Effects on Switching
VDD=25V Voo=25V
50 RG=259 RL=5009
VGS=0to10V Vss=0to10V
ID = 50 mA
"G" "G"
m 20 m
h'' 10 E
s'. S.
(l) 5 U)
10 20 50 100
ID - Drain Current (A) Rs -Gate Resistor (O)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (T0-226AA)
Duty Cycle = 0.5
Notes:
-5 " _
Thermal Impedance
I, Duty Cycle, D = T;
0.01 2. Per Unit Base = RNA =156°CNV
Normalized Effective Transient
3. TJM - TA = PoMZthoA(t)
Single Pulse
OA 1 10 100 1 K 10K
h - Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70205
11-4 S-04279-Reu. D , 16-Jul-01
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