TN22-1500 ,STARTLIGHT(Application Specific Discretes A.S.D.)FEATURES3n High clamping voltage structure (1200 - 1500V)n Low gate triggering current for direct d ..
TN22-1500B ,STARTLIGHTTN22®Application Specific DiscretesA.S.D.™STARTLIGHT12, TAB
TN22-1500H ,STARTLIGHTFEATURES3n High clamping voltage structure (1200 - 1500V)n Low gate triggering current for direct d ..
TN22-1500H ,STARTLIGHTFEATURES3n High clamping voltage structure (1200 - 1500V)n Low gate triggering current for direct d ..
TN2219A ,Leaded Small Signal Transistor General Purpose
TN2219A ,Leaded Small Signal Transistor General Purpose
TPS71727DCKT ,150mA, High PSRR, Low Quiescent Current, Low Noise LDO 5-SC70 -40 to 125Electrical Characteristics....... 611.2 Documentation Support ... 236.6 Typical Characteristics. 71 ..
TPS71727DSER ,150mA, High PSRR, Low Quiescent Current, Low Noise LDO 6-WSON -40 to 125Features... 1 8 Application and Implementation...... 168.1 Application Information........ 162 Appl ..
TPS717285DCKR ,150mA, High PSRR, Low Quiescent Current, Low Noise LDO 5-SC70 -40 to 125Electrical Characteristics....... 611.2 Documentation Support ... 236.6 Typical Characteristics. 71 ..
TPS717285DCKT ,150mA, High PSRR, Low Quiescent Current, Low Noise LDO 5-SC70 -40 to 125Electrical Characteristics....... 611.2 Documentation Support ... 236.6 Typical Characteristics. 71 ..
TPS71728DCKR ,150mA, High PSRR, Low Quiescent Current, Low Noise LDO 5-SC70 -40 to 125Maximum Ratings.. 510.2 Layout Examples...... 206.2 ESD Ratings ...... 510.3 Power Dissipation ... ..
TPS71728DCKRG4 ,150mA, High PSRR, Low Quiescent Current, Low Noise LDO 5-SC70 -40 to 125Maximum Ratings.. 510.2 Layout Examples...... 206.2 ESD Ratings ...... 510.3 Power Dissipation ... ..
TN22-1500
STARTLIGHT(Application Specific Discretes A.S.D.)
1/7
TN22STARTLIGHT
October 2000- Ed:1 High clamping voltage structure (1200- 1500V) Low gate triggering currentfor direct drive from
line(< 1.5mA) High holding current(> 175mA), ensuring high
striking energy.
FEATURESThe TN22has been specifically developedforuse electronic starter circuits. Usein conjunction
witha sensitive SCR anda resistor,it provides
high energy striking characteristics with low trig-
gering power. Thankstoits electronic concept,this
TN22 based starter offers high reliability levels and
extendedlife timeofthe fluorescent tubelamps.
DESCRIPTION
ABSOLUTE RATINGS (limiting values)
Application Specific Discretes
A.S.D.™
TN22
THERMAL RESISTANCES (AV)= 300 mW PGM =2W(tp=20μs) IFGM =1A(tp=20μs) VRGM =6V
GATE CHARACTERISTICS (maximum values)
ELECTRICAL CHARACTERISTICS
TN22This thyristorhas been designedfor useasa fluo-
rescent tube starter switch. electronic starter circuit provides:A pre-heating period during whicha heating
current is applied to the cathode heaters. One or several high voltage striking pulses
across the lamp.
BASIC APPLICATION DIAGRAM
PRINCIPLEOF OPERATION Pre-heating restthe switchSis opened and whenthe mains
voltageis applied acrossthe circuitafull wave rec-
tified current flows throughthe resistorR andthe
TN22 gate:at every half-cycle when this current
reachesthe gate triggering current (IGT)the thyris-
tor turnson.
Whenthe deviceis turnedonthe heating current,
limitedbythe ballast choke, flows throughthe tube
heaters.
The pre-heating timeis typically2or3 seconds. Pulsingthe endofthe pre-heating phasethe switchSis
turnedon.Atthis moment:the current throughthe devicesis higher thanthe
holding current (IH)the thyristor remainson until
the current falls belowIH. Thenthe thyristor turns
off.the currentis equalor lower thanthe holding cur-
rentthe thyristor turnsoff instantaneously.
When the thyristor turnsoffthe current flowing
throughthe ballast choke generatesa high voltage
pulse. This overvoltageis clampedbythe thyristor
avalanche characteristic (VBR).the lampisnot struck afterthe firstpulse,the sys-
tem startsa new ignition sequence again. Steady state
Whenthe lampisonthe running voltageis about
150V andthe starter switchisinthe off-state.
IMPLEMENTATIONThe resistorR mustbe chosento ensurea proper
triggeringin the worst case (minimum operating
temperature) accordingtothe specified gate trig-
gering current andthe peakline voltage.
SwitchS: This function canbe realized witha gate
sensitive SCR type: P0130AA 1EA3
This componentisa low voltage device(< 50V)
andthe maximum current sunk throughthis switch
can reachthe levelofthe thyristor holding current.
The pre-heating period canbe determinedbythe
time constantofa capacitor-resistor circuit
chargedbythe voltage dropof diodes usedinse-
riesinthe thyristor cathode.
TN22
0.2 0.4 0.6 0.8 1.2 1.4 1.61.821
T(av)P(W)0
Fig.1: Maximum average power dissipation ver-
sus average on-state current (rectifiedfull sine
wave).
20 3040 5060 7080 90 1001100.00.0
T(av)I(A)
Fig.3: Average on-state current versus case tem-
perature (rectifiedfull sine wave).
-40 -20 0 20 40 60 80 100 120 140
Igt[Tj]
Igt[Tj=25C]o
Ih[Tj]
Ih[Tj=25C]o
Fig.5: Relative variationof gate trigger current
and holding current versus junction temperature.
2030 40 5060 70 80 90 100110
T(av)P(W)
Fig.2: Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Tcase)for different thermal
resistances heatsink+ contact.
1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+031.0E-01
1.0E+00
1.0E+01
1.0E+02
Zth(j-a)(oC/W)
Fig.4: Thermal transient impedance junctionto
ambient versus pulse duration.
10 100 1000
Fig.6: Non repetitive surge peak on-state current
versus numberof cycles.
TN22
Fig.7: Non repetitive surge peak on-state current
fora sinusoidal pulse with width:tp= 10ms, and
corresponding valueofI2t.
0.1 110 200
V(V)TM
Fig.8: On-state characteristics (maximum values).
10 100 10001
I(mA)H
Fig.9: Relative variationof holding current versus
gate-cathode resistance (typical values).
I(A)T(rms)
0.1 1 10 100
Fig.10: Maximum allowable RMS current versus
time conduction and initial case temperature.
Note: Calculation madefotTj max= 135°C (the
failure modewillbe short circuit)
ORDERING INFORMATION
TN22
PACKAGE MECHANICAL DATADPAK
FOOTPRINT