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TN0205A-TN0205AD
N-Channel 20-V MOSFET
VISHAY
TN0205AIAD
New Product
Vishay Siliconix
N-Channel 20-V MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (C2) ID (mA)
2.0 © Vss = 4.5 v 250
20 2.5 @ VGS = 2.5 v 150
FEATURES BENEFITS
0 Low On-Resistance: 2.0 f2
. Low Threshold: 0.9 V (typ)
q Fast Switching Speed: 35 ns
q 2.5-V or Lower Operation
. Ease in Driving Switches
. Low Offset (Error) Voltage
. Low-Voltage Operation
. High-Speed Circuits
. Low Battery Voltage Operation
SOT-323
SC-70 (3-Leads)
Order Number:
TN0205A
SOT-363
SC-70 (6-Leads)
s, 1 lil 6 D1
G1 2 c, 5 G2
D2 3 TTI 4 $2
Order Number:
TN0205AD
APPLICATIONS
q Drivers: Relays, Solenoids, Lamps,
Hammers, Display, Memories
q Battery operated Systems
q Solid State Relay
q Load/Power Switching-Cell Phones, PDA
Marking Code:
TN0205A: BI
TN0205AD: DWI
w = Week Code
l= Lot Traceability
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol TN0205A TN0205AD Unit
Drain-Source Voltage VDS 20
Gate-Source Voltage VGS ch 8
TA = 25°C 250
Continuous Drain Current (TJ = 150°C)3 ID
TA = 70°C 200 mA
Pulsed Drain Current IDM 500
TA = 25°C 0.15 0.20 (Total)
M . P Di . ti a P W
axlmum ower Issnpa Ion a-- 70°C D 0'10 0.13 (Total)
Operating Junction and Storage Temperature Range T J. Tstg -55 to 150 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol TN0205A TN0205AD Unit
Thermal Resistance, Junction-to-Ambient" RthJA 833 625 (Total) °C/W
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70868
S-04279-Rev. B, 16-Jul-01
www.vishay.com
TN0205A/AD “3%
Vishay Siliconix New Product
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = O V, ID = 10 “A 20 24
Gate-Threshold Voltage VGS(th) VDs = VGS, ID = 50 uA 0.4 0.9 1.5
Gate-Body Leakage less VDS = 0 V, VGS = l 8 V l 2 i 100
VDs = 20 V, VGS = 0 V 0.001 100
Zero Gate Voltage Drain Current IDSS
VD3=20V,VGS=0V,TJ=55°C 5 11A
Vos = 5.0 V, VGS = 2.5 V 120 160
On-State Drain Currenta Imam) mA
Vos = 8.0 V, VGS = 4.5 V 400 800
VGS=2.5 V, ID: 150 mA 1.6 2.5
Drain-Source On-State Resistancea rDS(on) Q
Was = 4.5 V, ID = 250 mA 1.2 2.0
Forward Transmonductancea gfs Vos = 2.5 V, ID = 50 mA 200 mS
Diode Forward Voltagea VSD IS = 50 mA, VGS = 0 V 0.7 1.2 V
Dynamic
Total Gate Charge Qg 350 450
Gate-Source Charge Qgs Vros = 5.0 V, VGS = 4.5 V, ID = 100 mA 25 pC
Gate-Drain Charge di 100
Input Capacitance Ciss 20
Output Capacitance Coss VDs= 5.0 V, I/tss = 0 V, f= 1 MHz 14 pF
Reverse Transfer Capacitance Crss 5
Switching', C
Turn-On Delay Time tam) 7 12
Rise Time tr VDD = 3.0 V, RL = 100 Q 25 35 ns
Turn-Off Delay Time tum) ID = 0.25 A, VGEN = 4.5 V, Rs = 10 Q 19 30
Fall Time tf 9 15
a. Pulse test; pulse width 5 300 us, duty cycle 5 2%. VNOJ
b. For design only, not subject to production testing.
C. Switching time is essentially independent of operating temperature.
www.vishay.com Document Number: 70868
11-2 S-04279-Rev. B, 16-Jul-01
VISHAY
TN0205AIAD
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Output Characteristics
1.25 I
1.00 l
E -''"" 3 v E
'r, 0.75 's
' 2.5 V SE
I 0.50 I
0 1 2 3 4
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
.,5si, 8
ll;' Iz,
0 1 2 3 4
b - Drain Current (A)
Gate Charge
10 l l
1/ros = 6 v /
E 8 - ID = 100 mA A
8. f EA
Q. 8 8
j? tad-,'-",
fb' 6 I','-,' g
g ww'" g fl
u? vi V
d, 4 / I
Iii /''" e
o 100 200 300 400 500 600
Qg - Total Gate Charge (pC)
Transfer Characteristics
T J = -55I
0.6 25°C I
0.4 (f
0.0 0.5 1.0 1.5 2.0 2.5 3.0
I/ss - Gate-to-Source Voltage (V)
Capacitance
20 t. Ciss
a's..a,.._, I
( Coss
10 "''-...
a...-...-,
Iss,,..,,,. Crss
0 4 a 12 16 20
Vos - Drain-to-Source Voltage (V)
1 6 On-Resistance vs. Junction Temperature
I/ss = 4.5 V /
ID = 100 m A
1.4 - /"
1.2 //
0.8 ',we''''"
-50 -25 O 25 50 75 100 125 150
T., - Junction Temperature CC)
Document Number: 70868
S-04279-Rev. B, 16-Jul-01
www.vishay.com
TN0205A/AD
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1 T J = 125°C
"ig" 0.1 ii,;
g 75 ID = 250 mA
cn 0.01 L
0.001 0
0.00 0.3 0.6 0.9 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.2 l l
0.1 'sc,,,,, ID = 50 “A
S -01)
a -0.1 'N.
Ci.)']
g -0.2
-0.3 Ns,
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
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Document Number: 70868
S-04279-Rev. B, 16-Jul-01
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