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TN0201T
Enhancement-Mode MOSFET Transistors
VISHAY
TN0201T
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)Dss Min (V) rDS(on) Max (Q) VGS(th) (V) ID (A)
1.0 @ VGS = 10 V
20 1.0 to 3.0 0.39
1.4@Vcs=4.5V
FEATURES BENEFITS
q Low On-Resistance: 0.75 Q q Low OffsetVoltage
0 Low Threshold: <1.75V o Low-Voltage Operation
q Low Input Capacitance: 65 pF q Easily Driven VWhout Buffer
q Fast Switching Speed: 15 ns q High-Speed Circuits
q Low Input and Output Leakage q Low Error Voltage
T0-236
(sons)
Top View
APPLICATIONS
Vishay Siliconix
q Direct Logic-Level Interface: TTL/CMOS
q Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
q Battery Operated Systems
q Solid-State Relays
Marking Code: N1wll
N1 = Part Number Code for TN0201T
w = Week Code
fl = Lot Traceability
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20
Gate-Source Voltage VGS i 20
TA-- 2rc 0.39
Continuous Drain Current (TJ = 150°C) ID
TA-- 70°C 0.25 A
Pulsed Drain Currenta IDM 0.75
TA-- 25°C 0.35
Power Dissipation PD W
TA-- 70°C 0.22
Thermal Resistance, Junction-to-Ambient RthJA 357 "C/W
Operating Junction and Storage Temperature Range Ts Tsig -55 to 150 I
a. Pulse width limited by maximumjunction temperature.
Document Number: 70200 www.vishay.com
S-04279-Rev. E, 16-Jul-01
TN0201T VZISHAY
Vishay Siliconix
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 “A 20 40
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 0.25 mA 1.0 ISO 3.0
Gate-Body Leakage less VDs = 0 V, VGS = 21:20 V cl: 100 nA
Vros=16V,Vss=0V 1
Zero Gate Volta e Drain Current I
g DSS VDs=14V,Vss=0V,Tu=550C 10 “A
On-State Drain Currentb k0(on) Vos = 10 V, VGS = 10 V 0.5 (h75 A
VGS=4.5V, ID--0.1 A 1 1.4
Drain-Source On-Resistanceb rDS(on) Q
V63: 10 V, ID: 0.3A 0.75 1.0
Forward Transconductancdo gfs VDs = 10 V, ID = 0.2 A 450 ms
Diode Forward Voltage VSD ls = 0.3 A, VGS = 0 V (h85 V
Dynamica
Total Gate Charge Q9 1400
- VDs=16V,VGs=10V
Gate Source Charge As '0 E 0.3 A 300 pC
Gate-Drain Charge di 200
Input Capacitance Ciss 65
Output Capacitance Coss Vos = 15 V, VGS = 0 V, f= 1 MHz 35 pF
Reverse Transfer Capacitance Crss 6
Switchinga, C
td(on) 5
Turn-On Time
tr VDD=15 V,RL=50§2 10
ID _ 0.3A,VGEN=10V ns
td(ott) Rs = 6 Q 12
Turn-Off Time
a. For DESIGN AID ONLY, not subject to production testing. VNBP02
b. Pulse test: PW s300 us duty cycle s2%.
c. Switching time is essentially independent of operating temperature.
www.vishay.com Document Number: 70200
11 -2 S-04279-Rev. E, 16-Jul-01
VISHAY TN0201T
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Output Characteristics Transfer Characteristics
0.8 , I 1.0
///// 5V /[
0.7 l/ // 4 v
0.6 y /
v 0.5 v
g ft/Cc, ll' 0.6
5 0.4 F Vss= 10, 9, 8, 7,6V 8
if, o 3 V I (f, 0.4
I // 3V I
- 0.2 L''"" _ o 2 To = 125°C
. -55''C
0.1 / I I
2Y "s 2500
0.0 0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Vos - Drain-to-Source Voltage (V) Ves - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage On-Resistance vs. Drain Current
2.4 l 1.5
A 2.0 a 1.2
9, V N/ss - 4.5 v
g 1.6 c
05 JI'.
E .3 0.9
w o V = 10 V
k';' 1.2 5 GS
, ID @ 300 mA L, 0.6
"ic,'" 0.8 - Ci,
0.4 0.3
0.0 0.0
O 4 8 12 16 20 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VGS - Gate-to-Source Voltage (V) ID - Drain Current (A)
On-Resistance vs. Junction Temperature Threshold Voltage Variance Over Temperature
1.65 0.2 "Ns,
s,,,W'''' 0.1 \
A 1.45 A "N
Cl ft" ID = 250 11A
7:3? Vss=10V@300mA N, E. -0.0
fi. (-,-", 1.25 Vas = 4.5'v - 8
.‘2 E C
8 _ @100 m g -0.1 \
o: E N
.v / i' 'N,
o 1.05 A 's.
I l g, -0 2
A (n .
g o 's,
if l/ > "s,
= 0.85 t,,p'''" -0.3 "ss,
0.65 ',,,,,p''''' -0.4
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
To - Junction Temperature (°C) T: - Junction Temperature (°C)
Document Number: 70200
www.vishay.com
S-04279-Rev. E, 16-Jul-01
TN0201T
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Capacitance Gate Charge
140 20 I I
Vos = 16 v "
120 b = 300 mA /
100 g, f
"ii-,''. g
g 80 S
E :1 10 l
E 60 8
,t'.i,r o)
o 40 g? 5 /
0 4 8 12 16 20 0 500 1000 1500 2000 2500 3000
Vos - Drain-to-Source Voltage (V) % - Total Gate Charge (pC)
Source-Drain Diode Forward Voltage
ID = 250 MA
g 0.100
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V50 - Source-to-Drain Voltage (V)
www.vishay.com Document Number: 70200
11 -4 S-04279-Rev. E, 16-Jul-01
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