TN0201L ,Enhancement-Mode MOSFET TransistorsS-04279—Rev. E, 16-Jul-0111-1TN0201L/0401L, VN0300L/LSVishay Siliconix ..
TN0201L ,Enhancement-Mode MOSFET TransistorsTN0201L/0401L, VN0300L/LSVishay SiliconixN-Channel 20-, 30-, 40-V (D-S) MOSFETs Part Nu ..
TN0201L ,Enhancement-Mode MOSFET TransistorsS-04279—Rev. E, 16-Jul-0111-3I – Drain Current (mA) I – Drain Current (A)r – Drain-Source On-Resist ..
TN0201L ,Enhancement-Mode MOSFET TransistorsS-04279—Rev. E, 16-Jul-0111-2TN0201L/0401L, VN0300L/LSVishay Siliconix ..
TN0201T ,Enhancement-Mode MOSFET TransistorsS-04279—Rev. E, 16-Jul-0111-1TN0201TVishay Siliconix ..
TN0205A ,N-Channel 20-V MOSFETTN0205A/ADNew ProductVishay SiliconixN-Channel 20-V MOSFET V (V) r () I (mA)DS DS(on) ..
TPS65950A2ZXN ,Integrated Power Management IC (PMIC) with 3 DC/DC's, 11 LDO's, Audio Codec, USB HS Transceiver 209-NFBGA -40 to 85Features1• Power: • Charger:– Three Efficient Step-down Converters – Li-ion, Li-on Polymer, and Cob ..
TPS65950BZXN ,Integrated Power Management IC (PMIC) with 3 DC/DC's, 11 LDO's, Audio Codec, USB HS Transceiver 209-NFBGA -40 to 85Features:®– Bluetooth Interface– LED Driver Circuit for Two External LEDs– Automatic Level Control ..
TPS6734I , FIXED 12-V 120-mA BOOST-CONVERTER SUPPLY
TPS6734ID ,Fixed 12-V 120-MA Boost-Converter Supply TPS6734I FIXED 12-V 120-mA BOOST-CONVERTER SUPPLY SLVS127A – AUGUST 1995 – REVISED JANUARY 1999D O ..
TPS6734ID ,Fixed 12-V 120-MA Boost-Converter Supplyblock diagram81V VEN EN CC CCEN7FB170-kHzOscillatorPower Switch64OUTCOMP_S+ R QErrorAmplifier Drive ..
TPS6734IDR ,Fixed 12-V 120-MA Boost-Converter Supplyblock diagram81V VEN EN CC CCEN7FB170-kHzOscillatorPower Switch64OUTCOMP_S+ R QErrorAmplifier Drive ..
TN0201L-TN0401L-VN0300L
Enhancement-Mode MOSFET Transistors
VISHAY
TN0201LIO401L, VN0300LlLS
Vishay Siliconix
N-Channel 20-, 30-, 40-v (D-S) MOSFETs
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDSton) Max (C2) vGS(th) (V) ID (A)
TN0201L 20 1.2 @ Vss = 10 v 0.5 to 2 0.64
TN0401L 40 1.2 @ VGS =10 v 0.5 to 2 0.64
VNO300L 30 1.2 @ VGS = 10 v 0.8 to 2.5 0.64
VN0300LS 30 1.2 @ VGS = 10 v 0.8 to 2.5 0.67
FEATURES BENEFITS APPLICATIONS
q Low On-Resistance: 0.85 Q q Low Offset Voltage q Direct Logic-Level Interface: TTL/CMOS
q Low Threshold: 1.4 V o Low-Voltage Operation q Drivers: Relays, Solenoids, Lamps, Hammers,
q Low Input Capacitance: 38 pF q Easily Driven VNflthout Buffer Displays, Memories, Transistors, etc.
. Fast Switching Speed: 9 ns q High-Speed Circuits q Battery Operated Systems
. Low Input and Output Leakage q Low Error Voltage q Solid-State Relays
TO-226AA
(TO-92)
Device Marking
Front View
TN0201 L
"S" TN
0201 L
Top View
TN0201 L
TN0401 L
VNO300L
TN0401 L
"S" TN
0401 L
VN0300L
"S" VN
"S" = Siliconix Logo
TO-92S
(Copper Lead Frame) Device Marking
Front View
VN0300LS
"S" VN
G 0300LS
xxyy = Date Code
Top View
VN0300LS
"S" = Siliconix Logo
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol TN0201L TN0401L VN0300L VN0300LS Unit
Drain-Source Voltage VDS 20 4O 30 30
Gate-Source Voltage VGS ck 20 ck 20 ck 30 l 30
Continuous Drain Current TA-- 2500 I 0.64 0.64 0.64 0.67
(Ts = 150°C) TA-- 100°C D 0.38 0.38 0.38 0.43 A
Pulsed Drain Currenta IDM 1.5 1.5 3 3
TA-- 25°C 0.8 0.8 0.8 0.9
Power Dissipation PD W
TA= 100°C 0.32 0.32 0.32 0.4
Thermal Resistance, Junction-to-Ambient RthJA 156 156 156 156 "CA/V
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 I
a. Pulse width limited by maximumjunction temperature.
DocumentNumber: 70199
S-04279-Rev. E, 16-Jul-01
www.vishay.com
TN0201LI0401L, VN0300LILS
VISHAY
Vishay Siliconix
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
TN0201 L VN0300L
TN0401 L VN03OOLS
Parameter Symbol Test Conditions Typa Min Max Min Max Unit
Static
TN0201 L 55 20
Drain-Source Breakdown Voltage V(BR)DSS :36: 1:00“): TN0401 L 55 40
Vos = veg, b = 0.25 mA 1.4 0.5 2
Gate-Threshold Voltage Vegan) VDS = Kas, ID = 1 mA 1.5 0.8 2.5
Vros=0V,Vss=ce20V i10
Gate-Body Leakage less VDS = 0 V, Vss = i 30 V i100 nA
VDs=30V,VGs=0V IO
. l T J = 125''C 500
Zero Gate Voltage Drain Current IDSS VDS = 0.8 x V(BR)DSS, VGS = 0 V 1 pA
l T J = 125''C 100
l/rss-- 10 V,Vss=4.5V 0.9 0.25
On-State Drain Currentb low") A
Vros=10 V,N/ss=10N/ 3.5 1 1
Vss= 3.5V, ks-- 0.05A 1.8 4
VGS=5V,|D=0.3A 1.2 3.3
. . VGS=4.5 V, II): 0.25A 1.4 2
Drain-Source On-Reslstanceb rDS(on) I TJ = 125°C 2.6 4 Q
VGS=10 V,|D=1A 0.85 1.2 1.2
I TJ=125°C 1.6 2.4
Forward Transconductancdo gts VDs = 10 V, ID = 0.5 A 500 200 200 mS
Dynamic
Input Capacitance Ciss 38 60 100
Output Capacitance Coss VDS = 15 V, VGS = 0 V, f= 1 MHz 33 50 95 pF
Reverse Transfer Capacitance Crss 8 15 25
Switching''
Turn-On Time tON VDD = 15 V, RL = 14 Q 10 30 30
Turn-OffTIme tOFF ID E 'dr-tEt," 10 V 13 30 30 ns
a. For DESIGN AID ONLY, not subject to production testing. VNDQ03
b. Pulse test: PW 5300 us duty cycle s2%.
C. Switching time is essentially independent of operating temperature,
www.vishay.com
DocumentNumber: 70199
S-04279-Rev. E, 16-Jul-01
VISHAY
TN0201LI0401L, VN0300LlLS
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
ii 300
roam) — Drain-Source On-Resistance (Q
Ohmic Region Characteristics
V135: 10V
I/os - Drain-to-Source Voltage (V)
Transfer Characteristics
T:,,,,:,
Vos =15V
25°C Z,
1 2 3 4
Ves - Gate-Source Voltage (V)
On-Resistance vs. Drain Current
N/ss = 4.5 V
.,,e.,,,,,//'61/
ID - Drain Current (A)
rDS(on) — On—Resistance (Q ) ID — Drain Current (mA)
rDs(on) — Drain-Source On-Resistance ( Q )
(Normalized)
Output Characteristics for Low Gate Drive
2.7 V -
// 2.5 V
w,.-"'"
o,.-'''"'''"""
0 0.4 0.8 1.2 1.6 2.0
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
ID = 0.2 A
w,,,,-'''''''" 0.5A
N)d 1.0 A
0 4 8 12 16 20
Vss - Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
- Vss = 10 V
ID = 0.5A /
f 0.1 A
-50 -10 30 70 110 150
T J - Junction Temperature CC)
DocumentNumber: 70199
S-04279-Rev. E, 16-Jul-01
www.vishay.com
TN0201LI0401L, VN0300LILS VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Threshold Region Capacitance
10 120
V = 10 V l
VGS = 0 V
TJ=150°C f-- MHz
g 1 3 80
E a: \
o g 60
I I u;
9 0.1 o 40 'ss. C,.
20 '""s--.. Coss
-5500 'ms....., Crss
0.01 0
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 10 20 30 40 50
VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V)
Gate Charge Load Condition Effects on Switching
I D = 1 A VDD = 25 V
Rs = 25 g
A 5 N/ss = 0 to 10 V
a c,,,,,,,:,:,,',',',')'
tD V = 15 V
' DS A
s)'-,-'; 4 " Cp''' fir'..
it 3 / F?
é p", 5
li,' ",,/i' 24 v 'ii
8 2 +l I
I '- -
f' 1 /
0 80 160 240 320 400 0.1 1 10
0g - Total Gate Charge (pC) ID - Drain Current (A)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (T0-226AA)
Duty Cycle = 0.5
Jd 8 A
"G E 0.1 PDM
T7 E -5 " _
2 ff - t2 -
E 1. Duty Cycle, D = i,
5 7 0.01 2. Per Unit Base = RNA = 156°C/w
3. TJM - TA = PDMirtruA(t)
Single Pulse
0.1 0.5 1 5 10 50 100 500 1K 5K 10K
tl - Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70199
11 -4 S-04279-Rev. E, 16-Jul-01
:
www.loq.com
.
