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TMD0708-2
POWER GAAS MMIC
TOSHIIA
POWER GaAs MMIC
MICROWAVE SEMICONDUCTOR
TECH N ICAL DATA TMD0708-2
k. ~a? 1r f“4%n-v . g
Features:
Cl HIGH POWER EI BROAD BAND INTERNALLY MATCHED
PidB= 33 dBm at 7.1 to 8.5 GHz
CI HIGH GAIN ICI HERMETICALLY SEALED PACKAGE
G1dB= 22 dB at 7.1 to 8.5 GHz
ABSOLUTE MAXIMUM RATINOS(Ter--25oC)
CHARACTERISTICS SYMBOL UNIT RATINGS
DRAIN SUPPLY VOLTAGE VDD y 15
GATE SUPPLY VOLTAGE VGG y -10
INPUT POWER Pin W 0.1
FLANGE TEMPERATURE Tf 'C -30--l-80
STORAGE TEMPERATURE Tstg oc, -6rs--l-r75
RF cHARAcTERISTIcS(Tar-c250C)
CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX.
Output Power at 1 dB PldB y001---vID2--003--- dBm 32.0 33.0 -
Gain Compression Point 10V,
Power Cain at 1 dB GldB W,C:u---5 V dB 20.0 22.0 -
Gain Compression Point f= 7.1-8.5 GUZ
Drain Current IDD * A - 1.70 2.00
Input VSWR VSWRi - - - 3.0
* IID=IID1+IID2+1ID3
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
* The information contained herein may be changed without prior notice. It is therefore advisable to contact TOSHIBA
gf.%. before proceeding with the design of equipment incorporating this product.
'tmud. TOSHIBA COPPDPATION 14mm asia :m aaa :am- I
July 1997
PACKAGE OUTLINE (2-1 1 E1A)
iE5BNMEiirMEte_it=" I Moo I08-2 - RM' 'EM-Tow, =VNa= RNMNtNCl.S. - BEB-rrM+ RMW, r.
6-2. 54i0. 2(pitch)
Unit in mm
2. OWN.
2. 5MAX.
Cir n.
Lzzzz,).
C,! 2-R1. 25
- L 1 1r
Ci) :VDDl © :RF OUT
© :RF IN Ci) :No Corineetion
© :VDD2 :VDD3
.‘:VGG © :GND
© :VDD3
HANDLING; PLUiE).AU.LLlQNL? FOR PACKAQED TYPE
.Soldering iron should be grounded and the operating time should not exceed 10
seconds at 260'C. Flanges of devices should be attached using screws and
washers. Recommended torques are 0.18-0.20 Nun.
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