TMBYV10-60FILM ,SMALL SIGNAL SCHOTTKY DIODEABSOLUTE MAXIMUM RATINGS Symbol Parameter Value UnitV Repetitive Peak Reverse Voltage 60 VRRMI Aver ..
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TMBYV10-60FILM
SMALL SIGNAL SCHOTTKY DIODE
TMBYV 10-60SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTIONMetal to silicon rectifier diode in glass case featu-
ring very low forward voltage drop and fast recovery
time, intended for low voltage switching mode
power supply, polarity protection and high fre-
quency circuits.
August 1999 Ed: 1A
ABSOLUTE MAXIMUM RATINGS (limiting values)
THERMAL RESISTANCE1/5
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICSDYNAMIC CHARACTERISTICS
* Pulse test: tp ≤ 300μs δ < 2%.
Forward current flow in a Schottky rectifier is due
to majority carrier conduction. So reverse recovery
is not affected by storage charge as in conventional
PN junction diodes.
Nevertheless, when the device switches from for-
ward biased condition to reverse blocking state,
current is required to charge the depletion capaci-
tance of the diode.
This current depends only of diode capacitance and
external circuit impedance. Satisfactory circuit be-
haviour analysis may be performed assuming that
Schottky rectifier consists of an ideal diode in par-
allel with a variable capacitance equal to the junc-
tion capacitance (see fig. 5 page 4/4).
TMBYV 10-60
Figure 1. Forward current versus forward
voltage at low level (typical values).
Figure 2. Forward current versus forward
voltage at high level (typical values).
Figure 3. Reverse current versus junction
temperature.
Figure 4. Reverse current versus VRRM in per
cent.3/5
TMBYV 10-60
Figure 5. Capacitance C versus reverse
applied voltage VR (typical values)
Figure 6. Surge non repetitive forward current
for a rectangular pulse with t ≤ 10 ms.
Figure 7. Surge non repetitive forward current
versus number of cycles.
TMBYV 10-60
Marking: ring at cathode end.
Weight: 0.15g
PACKAGE MECHANICAL DATA
FOOT PRINT DIMENSIONS (Millimeter)MELF Glass
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval
of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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TMBYV 10-60
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